Lithium-drifted silicon for harsh radiation environments

Grant, James P.; Buttar, C. M.; Brozel, M.R.; Keffous, A.; Cheriet, A.; Bourenane, K.; Bourenane, A.; Kezzoula, F.; Menari, H.

doi:10.1016/j.nima.2008.03.052

Cited by 1 publication

(2 citation statements)

References 8 publications

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“…Among them, high-purity germanium and lithium-drift silicon function below liquid nitrogen temperature due to the narrow band gap-induced noise, which tends to mask the signal at room temperature; as a result, the applications of these materials are dramatically limited. 6,7 Thallium bromide (TlBr) and mercury iodide (HgI 2 ) lack sufficient device sensitivity and carrier collection efficiency. 8,9 Cadmium zinc telluride (CZT) simultaneously possesses high carrier mobility and low dark current and can operate at room temperature; thus, since the 1990s, CZT has became a benchmark energy spectrum-resolved radiation detector with excellent energy resolution (ER).…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, only a few semiconductor materials that detect radiation with excellent crystal quality have met the strict requirements of single‐photon resolution thus far. Among them, high‐purity germanium and lithium‐drift silicon function below liquid nitrogen temperature due to the narrow band gap‐induced noise, which tends to mask the signal at room temperature; as a result, the applications of these materials are dramatically limited 6,7 . Thallium bromide (TlBr) and mercury iodide (HgI 2 ) lack sufficient device sensitivity and carrier collection efficiency 8,9 .…”

Section: Introductionmentioning

confidence: 99%

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Development of robust perovskite single crystal radiation detectors with high spectral resolution through synergetic trap deactivation and self‐healing

Wang

Song

et al. 2023

InfoMat

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Organic–inorganic halide perovskite single crystals (SCs) are promising materials for detecting ionizing radiation owing to their outstanding photoelectric conversion capability and inexpensive solution processability. However, the accuracy and stability of the detectors have been limited due to the charge traps and defects in SCs, especially when operated under high‐precision photon‐counting mode for energy spectrum acquisition. Here, we proposed a trap freezing deactivation route, which obviously suppressed dark current and noise by up to 97% and 92%, respectively. Furthermore, the bulk ion migration effect was essential for the ability to instantly self‐heal defects induced by radiation damage at temperatures down to −30°C. Consequently, the detector exhibits a record high energy resolution of 7.5% at 59.5 keV for 241Am γ‐ray source, which is the best solution‐processed semiconductor radiation detectors at the same energy range. In addition, the detector maintains over 90% of its initial performance after 9 months of storage when tested in the air. Our results will represent a revision of the paradigm that high‐spectral‐resolution and robust radiation detectors can only be realized with high temperature grown inorganic semiconductor single crystals.image

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