1980
DOI: 10.1063/1.91887
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lithium doping of polycrystalline silicon

Abstract: Electrolytic lithium doping of high-purity polycrystalline silicon samples has been shown to increase not only the material conductivity but also the minority-carrier lifetime.

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Cited by 14 publications
(3 citation statements)
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“…It can also be referred to an improvement of the reaction kinetics during cycling by repeatedly insertion/extraction of lithium ions in which the conductivity may improve as a result of the lithium-doping or changes in geometry. 50 Galvanostatic charge/discharge experiments of the Al/SiNWs electrode with different Al weight percentages were carried out in the voltage range of 0.01-2 V. Uncoated SiNWs/TiN electrode was also measured for comparison. Fig.…”
Section: Resultsmentioning
confidence: 99%
“…It can also be referred to an improvement of the reaction kinetics during cycling by repeatedly insertion/extraction of lithium ions in which the conductivity may improve as a result of the lithium-doping or changes in geometry. 50 Galvanostatic charge/discharge experiments of the Al/SiNWs electrode with different Al weight percentages were carried out in the voltage range of 0.01-2 V. Uncoated SiNWs/TiN electrode was also measured for comparison. Fig.…”
Section: Resultsmentioning
confidence: 99%
“…These atoms move along the ͗111͘ channels in a zigzag fashion, alternatively passing through the tetrahedral and hexagonal interstitial sites of the lattice, which are their equilibrium and saddle points for diffusion. [23][24][25] On the other hand, a high diffusivity of a possible codopant is not desirable in the manufacturing process of shallow junctions. However, experiments have shown that the presence of 10 18 cm −3 carbon reduces the room temperature diffusion rate of Li to 0.1% of its value in pure Si.…”
Section: B Trapping Of Codopants At Dopant Clustersmentioning
confidence: 99%
“…In large amounts, Li-doping can counter-dope an initially doped p-type silicon and make it n-type. 23 Amorphous silicon doped by lithium diffusion results in n-type, because Li are placed on silicon interstitials donating one electron. 24 A silicon structure with one Li atom in an interstitial has a similar electronic structure as one with a Si atom replaced with arsenic in the sense that both, arsenic and lithium, yield one free-electron resulting in n-type doping.…”
mentioning
confidence: 99%