Lithium doping and photoemission of diamond thin films

Okumura, Kazuki; Mort, J.; Machonkin, M. A.

doi:10.1063/1.104008

Cited by 63 publications

(14 citation statements)

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“…[15]. Interestingly, Hall effect measurements on the in-diffused Li sample did not yield any meaningful results, indicating that the Li inside the diamond did not act as an efficient donor, in contrast to theoretical predictions, however, in agreement with experimental results of other groups [7,15].…”

Section: Diffusion With An External Electrical Fieldcontrasting

confidence: 44%

“…Much work has been devoted to the study of Li incorporation and diffusion in diamond; Incorporation of Li in diamond was attempted during CVD growth [6,7], by ion implantation [8][9][10][11][12][13] and by diffusion with and without an electrical field [14,15]. In most of these studies SIMS profiling was applied, although other scientists have worked with the optical and electrical effects of the in-diffused Li.…”

Section: Literature Surveymentioning

confidence: 99%

“…Li incorporation from a vapor phase [7] yielded very low conductivity material, even though Li was detected by SIMS to be present in the crystal.…”

Section: Literature Surveymentioning

confidence: 99%

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Diffusion of Lithium in Diamond

Uzan‐Saguy¹,

Cytermann²,

Fizgeer³

et al. 2002

phys. stat. sol. (a)

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Section: Diffusion With An External Electrical Fieldcontrasting

confidence: 44%

Section: Literature Surveymentioning

confidence: 99%

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Diffusion of Lithium in Diamond

Uzan‐Saguy¹,

Cytermann²,

Fizgeer³

et al. 2002

phys. stat. sol. (a)

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“…Li has been introduced via a range of methods: implantation [145,148,149,[151][152][153][154], in-diffusion [155][156][157], and during growth [144,158,159]. Different methods yield various levels of success in terms of the resultant conductivity of the doped diamond.…”

Section: Interstitial Dopants: Alkali Metalsmentioning

confidence: 99%

Theoretical models for doping diamond for semiconductor applications

Goss

Eyre

Briddon

2008

Physica Status Solidi (b)

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Diamond is a material with superlative properties in terms of carrier mobilities and device characteristics for high power electronics applications. Although p‐type diamond is routinely available using boron, n‐type material via impurity doping during the growth of diamond has historically been limited in success, partly because nitrogen is a hyper‐deep donor, but compounded by the compact lattice leading to low solubilities for alternative species. Implantation doping is often hampered by persistent residual damage leading to significant levels of compensation and the formation of dopant complexes with lattice vacancies. Experiment has been augmented by the application of quantum‐chemical methods to assess the likely properties should specific impurities or impurity complexes be realisable in real materials. The review outlines many of the doping strategies explored for diamond, including simple impurity doping and co‐doping. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Li and Na are always interstitial atoms, while nitrogen, phosphorus and other atoms are the substitution atoms. In 1990, the photoemission properties of lithium-doped diamond thin films were studied by Okumura and his teammates [12]. In 2007, Lombardi and his teammates theoretically studied the properties of the interstitial doping and the substitution doping of lithium and sodium.…”

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confidence: 99%

Electronic structures of phosphorus-doped diamond films and impacts of their vacancies

Wang

Shao

2010

Sci. China Phys. Mech. Astron.

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In order to better understand the bonding mechanisms of the phosphorus-doped diamond films and the influences of the phosphorus-doped concentration on the diamond lattice integrity and conductivity, we calculate the electronic structures of the phosphorus-doped diamond with different phosphorus concentrations and the density of states in the phosphorus--doped diamond films with a vacant lattice site by the first principle method. The calculation results show the phosphorus atom only affects the bonds of a few atoms in its vicinity, and the conductivity increases as the doped concentration increases. Also in the diamond lattice with a total number of 64 atoms and introducing a vacancy into the non-nearest neighbor lattice site of a phosphorus atom, we have found that both the injuries of the phosphorus-doped diamond films and the N-type electron conductivity of diamond films could be improved. phosphorus-doped, impurity level, vacancy, diamond lattice PACS: 71.15.Mb, 71.20.-b, 81.05.ug, 68.55.agDiamond, an allotrope of carbon, has many excellent characteristics, such as extremely high degree of hardness and wear-resisting performance, high breakdown voltage and electron-hole mobility, excellently thermal conductivity and biological compatibility, low dielectric coefficient and good chemical inertness. These characteristics fit a wide range of potential applications in the mechanics, heat, electrics, magnetic, optics and other fields. The diamond semiconductor devices can be used in the adverse circumstances of high temperature, high pressure and strong radiation and other harsh environments. Diamond has an extremely attractive prospect in the semiconductor industries and microelectronic fields. Because the PN junction is the basic structure of the semiconductor electronic devices, it needs to be prepared with the P-type diamond and the N-type diamond. The present technology of the P-doped diamond thin films (mainly boron-doped films) has become quite mature and is fully used in the treatment of the environment [1-4], medicine [5,6] and industries [7][8][9]. However the preparations of the N-doped diamond thin films are quite difficult, the impurity levels of the N-diamond films are relatively deep, and the electrical resistivity is very high. The N-doped diamond thin films can't meet the technical requirements of the semiconductor electronic devices. Thus these difficulties limit the application of the N-doped diamond thin films in the electronics fields.With microelectronic industries rapidly developing, the research of the N-type diamond has attracted more and more electronic industries' technicians and researchers. The impure atoms of the N-type diamond mainly contain lithium, sodium, nitrogen, phosphorus, oxygen, and sulfur. Li and Na are always interstitial atoms, while nitrogen, phosphorus and other atoms are the substitution atoms. In 1990, the photoemission properties of lithium-doped diamond thin

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Lithium doping and photoemission of diamond thin films

Cited by 63 publications

References 10 publications

Diffusion of Lithium in Diamond

Diffusion of Lithium in Diamond

Theoretical models for doping diamond for semiconductor applications

Electronic structures of phosphorus-doped diamond films and impacts of their vacancies

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