2021
DOI: 10.1007/978-981-16-5407-7_2
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Liquid Phase Exfoliation and Microwave Assisted Modification in MoS2 Nanostructure

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Cited by 2 publications
(1 citation statement)
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“…Bulk MoS 2 has an indirect band gap small indirect band gap of 1.29 eV but MoS 2 in monolayer form has a direct band gap of about 1.9 eV [4] and this bandgap increases with number of layers [10,11]. Few layer MoS 2 with band gap in the range of 2-4 eV falls under the category of wide band gap semiconductors [12,13]. Wide band gap semiconductors have high optical transparency, controllable carrier concentration, and tunable electrical conductivity and can withstand higher temperatures, voltages and frequencies.…”
Section: Introductionmentioning
confidence: 99%
“…Bulk MoS 2 has an indirect band gap small indirect band gap of 1.29 eV but MoS 2 in monolayer form has a direct band gap of about 1.9 eV [4] and this bandgap increases with number of layers [10,11]. Few layer MoS 2 with band gap in the range of 2-4 eV falls under the category of wide band gap semiconductors [12,13]. Wide band gap semiconductors have high optical transparency, controllable carrier concentration, and tunable electrical conductivity and can withstand higher temperatures, voltages and frequencies.…”
Section: Introductionmentioning
confidence: 99%