Liquid Phase Exfoliated 2-D MoS<sub>2</sub>-Based Broadband Heterojunction Low-Powered Photosensor

Kumar, Surendra; Gautam, Vidushi; Singh, Abhishek Kumar; Maurya, Gyanendra Kumar; Singh, Sanjai; Kumar, Pramod

doi:10.1109/ted.2023.3239041

Cited by 3 publications

(1 citation statement)

References 33 publications

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“…In recent years, 2D transition metal dichalcogenides (TMDs) [1], have gained tremendous interest due to their exciting properties that make them promising candidates for optoelectronics, photonics, catalysis, spintronics, valleytronics and flexible electronics [2][3][4][5]. Ultrathin nanosheets of TMDs, especially monolayer thick MoS 2 , WS 2 , etc exhibit interesting electrical and optical properties as compared to their bulk counterparts, primarily owing to a change in band structure [6].…”

Section: Introductionmentioning

confidence: 99%

Quaternary, layered, 2D chalcogenide, Mo_1−xW_xSSe: thickness dependent transport properties

Kumar,

Jenjeti,

Vankayala

et al. 2023

Nanotechnology

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Highly oriented, single crystalline, quaternary alloy chalcogenide crystal, Mo x W1−x S2y Se2(1−y), is synthesized using a high temperature chemical vapor transport technique and its transport properties studied over a wide temperature range. Field effect transistors (FET) with bottom gated configuration are fabricated using Mo0.5W0.5SSe flakes of different thicknesses, from a single layer to bulk. The FET characteristics are thickness tunable, with thin flakes (1–4 layers) exhibiting n-type transport behaviour while ambipolar transfer characteristics are observed for thicker flakes (>90 layers). Ambipolar behavior with the dominance of n-type over p-type transport is noted for devices fabricated with layers between 9 and 90. The devices with flake thickness ∼9 layers exhibit a maximum electron mobility 63 ± 4 cm2 V−1s−1 and an I ON/I OFF ratio >108. A maximum hole mobility 10.3 ± 0.4 cm2 V−1s−1 is observed for the devices with flake thickness ∼94 layers with I ON/I OFF ratio >102–103 observed for the hole conduction. A maximum I ON/I OFF for hole conduction, 104 is obtained for the devices fabricated with flakes of thickness ∼7–19 layers. The electron Schottky barrier height values are determined to be ∼23.3 meV and ∼74 meV for 2 layer and 94 layers flakes respectively, as measured using low temperature measurements. This indicates that an increase in hole current with thickness is likely to be due to lowering of the band gap as a function of thickness. Furthermore, the contact resistance (R ct) is evaluated using transmission line model (TLM) and is found to be 14 kohm.μm. These results suggest that quaternary alloys of Mo0.5W0.5SSe are potential candidates for various electronic/optoelectronic devices where properties and performance can be tuned within a single composition.

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Section: Introductionmentioning

confidence: 99%

Quaternary, layered, 2D chalcogenide, Mo_1−xW_xSSe: thickness dependent transport properties

Kumar,

Jenjeti,

Vankayala

et al. 2023

Nanotechnology

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Ambipolar MoS₂ Field Effect Transistors with Negative Photoconductivity and High Responsivity Using an Ultrathin Epitaxial Ferroelectric Gate

Sun,

Wang,

Wang

et al. 2024

Adv Funct Materials

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Ferroelectric field effect transistors (FeFETs), characterized by their low power consumption and polarization effect, can be employed in photodetectors based on 2D materials. In this paper, a MoS2 phototransistor with epitaxial ferroelectric (Hf0.5Zr0.5)O2 (HZO) is reported as a gate dielectric layer. Gate‐dielectric‐polarization‐dependent ambipolar behavior is observed in the FET, and relatively low power consumption and hysteresis‐free loop are achieved in the FeFET. The anomalous negative photoconductivity (NPC) is observed as well. Possible reasons for such phenomenon are clarified including the photogating effect originating from the interface traps and the polarization‐dependent electric‐field control through ferroelectric gating. The high responsivity of −8.44 × 103 A W−1 in the negative photoconductivity as well as the response time of 500 ms are reported. The demonstrated Molybdenum disulfide (MoS2) FeFET photodetectors show great potential in the on‐chip complementary metal‐oxide semiconductor (CMOS)‐compatible circuits for multifunctional devices.

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Low-Cost Solution-Processed Facile h-MoO₃/n-Si Heterojunction Diode

Kumar,

Rudra,

Singh

et al. 2023

2023 IEEE 23rd International Conference on Nanotechnology (NANO)

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Liquid Phase Exfoliated 2-D MoS₂-Based Broadband Heterojunction Low-Powered Photosensor

Cited by 3 publications

References 33 publications

Quaternary, layered, 2D chalcogenide, Mo_1−xW_xSSe: thickness dependent transport properties

Quaternary, layered, 2D chalcogenide, Mo_1−xW_xSSe: thickness dependent transport properties

Ambipolar MoS₂ Field Effect Transistors with Negative Photoconductivity and High Responsivity Using an Ultrathin Epitaxial Ferroelectric Gate

Low-Cost Solution-Processed Facile h-MoO₃/n-Si Heterojunction Diode

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Liquid Phase Exfoliated 2-D MoS2-Based Broadband Heterojunction Low-Powered Photosensor

Cited by 3 publications

References 33 publications

Quaternary, layered, 2D chalcogenide, Mo1−x W x SSe: thickness dependent transport properties

Quaternary, layered, 2D chalcogenide, Mo1−x W x SSe: thickness dependent transport properties

Ambipolar MoS2 Field Effect Transistors with Negative Photoconductivity and High Responsivity Using an Ultrathin Epitaxial Ferroelectric Gate

Low-Cost Solution-Processed Facile h-MoO3/n-Si Heterojunction Diode

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Product

Resources

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Liquid Phase Exfoliated 2-D MoS₂-Based Broadband Heterojunction Low-Powered Photosensor

Quaternary, layered, 2D chalcogenide, Mo_1−xW_xSSe: thickness dependent transport properties

Quaternary, layered, 2D chalcogenide, Mo_1−xW_xSSe: thickness dependent transport properties

Ambipolar MoS₂ Field Effect Transistors with Negative Photoconductivity and High Responsivity Using an Ultrathin Epitaxial Ferroelectric Gate

Low-Cost Solution-Processed Facile h-MoO₃/n-Si Heterojunction Diode