Liquid phase epitaxy of silicon at very low temperatures

Girault, B.; Chevrier, F.; Joullié, A.; Bougnot, G.

doi:10.1016/0022-0248(77)90079-3

Cited by 44 publications

(27 citation statements)

References 9 publications

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“…The plot of the calculated parameter a against temperature for the measured experimental data [4,16,71,72] is shown in Figure 15. The trend line gives the liquidus constants equal to a = 31,162 J/mol and b = 4.03 J/mol-K, which are relatively close to the former calculations by Thurmond and Kowalchik (a = 34,080 J/mol and b = 6.28 J/mol-K).…”

Section: F Si-zn Systemmentioning

confidence: 99%

“…The liquidus in the area between the eutectic and the monotectic temperatures was measured by Williams in 1907, [75] Thurmond and Kowalchik in 1960, [4] and Girault et al in 1977. [16] The measurements done by Williams are not accurate because approximately 2 pct impurities (Al and Fe) existed in the sample. The calculated a from the point reported by Girault can be considered as an outlier compared with the other calculated values from the experimental data.…”

Section: Si-bi Systemmentioning

confidence: 99%

“…[45,46] Figure 8 shows the a-T plot using the reported liquidus data [4,16,44,45] which gives a = 29,206 J/mol and b = 16.26 J/mol-K. These values are both greater than the previously reported values as a = 17,980.36 J/mol and b = 4.77 J/mol-K [4] and a = 20,980 J/mol and b = 9.20 J/mol-K. [47] The calculated liquidus curve for this system using the obtained liquidus constants is shown in Figure 9.…”

Section: F Si-zn Systemmentioning

confidence: 99%

“…The Si-Zn phase diagram is a simple eutectic system with a eutectic at 692.2 K (419.2°C) and X Si = 0.001 according to the assessed phase diagram by Shukla et al [43] The liquidus of this system has been measured by gravimetric method [4,16,44] and by differential thermal analysis (DTA). [45,46] Figure 8 shows the a-T plot using the reported liquidus data [4,16,44,45] which gives a = 29,206 J/mol and b = 16.26 J/mol-K.…”

Section: F Si-zn Systemmentioning

confidence: 99%

“…There is a eutectic in this system at 850.1 K (577.1°C) and X Si = 0.122. [5] The liquidus of this system has been measured through many experimental works, [6][7][8][9][10][11][12][13][14][15][16] which had been mostly done using thermal analysis. The measured liquidus for Si-Al system from several studies are listed in Table I for both hypoeutectic and hypereutectic compositions to clear the liquidus calculation procedure.…”

Section: A Si-al Systemmentioning

confidence: 99%

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Liquidus of Silicon Binary Systems

Safarian

Kolbeinsen

Tangstad

2011

Metall Mater Trans B

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Thermodynamic knowledge about liquid silicon is crucial for the production of solar-grade silicon feedstock from molten silicon. In the current study, liquidus for silicon binary alloys is formulated using a previously developed method in which the liquidus curve is calculated using two constants. The liquidus measurements for the silicon portion of the silicon alloys with Al, Ca, Mg, Fe, Ti, Zn, Cu, Ag, Au, Pt, Sn, Pb, Bi, Sb, Ga, In, Ni, Pd, Mn, and Rh are reviewed, and the consistent data were used to determine the liquidus constants. The liquidus curves for silicon binary systems are calculated and plotted. It is indicated that the calculated liquidus curves fit well with the experimental data. A correlation between the determined liquidus constants is also observed, which can be used to gain a better understanding of the thermodynamics of the silicon binary melts.

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Section: F Si-zn Systemmentioning

confidence: 99%

Section: Si-bi Systemmentioning

confidence: 99%

Section: F Si-zn Systemmentioning

confidence: 99%

Section: F Si-zn Systemmentioning

confidence: 99%

Section: A Si-al Systemmentioning

confidence: 99%

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Liquidus of Silicon Binary Systems

Safarian

Kolbeinsen

Tangstad

2011

Metall Mater Trans B

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Liquid phase epitaxial growth of undoped gallium arsenide from bismuth and gallium melts

Yakusheva

Журавлев

Chikichev

et al. 1989

Cryst. Res. Technol.

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Electrical properties of undoped GaAs layers grown from Ga and Bi melts under identical conditions are compared as a function of growth temperature and pregrowth baking time. Identification of residual shallow donors and acceptors is performed by means of laser photoelectrical magnetic spectroscopy and low temperature photoluminescence. It is shown that a change of solvent metal results in complete alteration of major background impurities in grown epilayers due, mainly, to changes of distribution coefficients of these impurities. High purity, low compensation n‐GaAs layers can be grown from Bi melt (epilayers with the Hall mobility of electrons μ77K ≈ 150000 cm2/V · sat n = 2.5 · 1014 cm−3 has been grown).

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Gallium Contacts on p‐type silicon substrates

Stuckings

Fischer

Giroult³

et al. 2001

Progress in Photovoltaics

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A significant reduction in contact resistance of palladium/silicon contacts was realised by the use of a thin intermediate gallium layer. The contact resistance of the palladium/gallium/silicon contact was found to be similar to aluminium/silicon contacts on 0.5 Ω cm silicon. Solar cells processed on 1 Ω cm substrates with this structure demonstrated better contact properties than conventional aluminium/silicon contacts. The improved characteristics are believed to be a result of gallium/silicon alloying at low temperature (400°C). The palladium layer is critical as aluminium/gallium/silicon layers show dramatically increased contact resistance. The palladium silicide may interact with the aluminium layer to form a stable ternary compound, preventing aluminium from penetrating deeper into the silicon. Copyright © 2001 John Wiley & Sons, Ltd.

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Liquid phase epitaxy of silicon at very low temperatures

Cited by 44 publications

References 9 publications

Liquidus of Silicon Binary Systems

Liquidus of Silicon Binary Systems

Liquid phase epitaxial growth of undoped gallium arsenide from bismuth and gallium melts

Gallium Contacts on p‐type silicon substrates

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