Liquid-phase epitaxy of 2H–SiC film on a (0001) 4H–SiC substrate in Li–Si melt

Temperature-Dependent Stability of Polytypes and Stacking Faults inSiC: Reconciling Theory and Experiments

“…Our T-dependent diagram of the polytypic stability plotted in Fig. 2 is in excellent agreement with several experimental evidences such as the preferential growth at temperatures below ∼1850K of the 3C polytype over all others [10,14,21], the higher stability of 4H and 6H polytypes at higher temperatures [16][17][18][19][20]27], and the rare appearance of 2H-SiC [26,43].…”

Role of surface effects on silicon carbide polytype stability

“…However, under unusual growth conditions (temperature below 1500 1C), 2H-SiC can grow. For example, Imade et al reported that only the carbon face of a 4H-SiC seed yields to the epitaxial growth of 2H-SiC by Liquid Phase Epitaxy [14]. Table 3 summarizes our conclusions for the 6H/4H, 4H/3C, 6H/3C systems and gives the relative stability of these polytypes.…”

Nano-sized silicon carbide: synthesis, structure and properties

“…43 In contrast to the synthesis of nano-sized SiC films, attempts to prepare bulk nanomaterials were less successful. 4,5,44 Preparation of bulk nanostructured materials was hampered by the intensive recrystallization of nanopowders at consolidation temperatures.…”