1992
DOI: 10.1063/1.351889
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Liquid-phase epitaxial growth of AlGaAsP with application to InGaP/AlGaAsP single heterostructure diodes

Abstract: Good wallty Ab.28G~.72Aso.62Po.38 layers lattice matched to GaAse61Po.39 epitaxial substrates were grown by liquid-phase epitaxy using a supercooling technique. By selection of the optimum growth condition, we can obtain the undoped layer with a low electron concentration of 1 X lOI cmm3. The four major emission peaks observed from the temperature dependence of photoluminescence of the undoped AlGaAsP layer can be identified as the near-band-to-band, donor-to-valence-band, conduction-band-to-acceptor, and dono… Show more

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