1986
DOI: 10.1016/0379-6787(86)90075-x
|View full text |Cite
|
Sign up to set email alerts
|

Liquid phase epitaxial growth and electrical characterization of CuInSe2

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
3
0

Year Published

1988
1988
2020
2020

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 23 publications
(3 citation statements)
references
References 36 publications
0
3
0
Order By: Relevance
“…CISe semiconductor is a crucial material as an absorber layer and offers an advantage of lowcost flexible thin-film solar cells [14]. Chemical bath deposition (CBD), Electrodeposition (ED) [26][27][28][29][30][31][32][33][34][35][36][37][38][39], Successive Ionic Layer Adsorption and Reaction (SILAR), Spray pyrolysis (SP), three-source evaporation [40][41][42][43][44][45][46][47][48], laser annealing [49][50], flash evaporation [51][52][53], spray pyrolysis [54][55][56][57][58][59], sputtering [60][61][62][63][64][65][66][67][68][69], liquid phase epitaxy [70][71],Electrodeposition [72][73...…”
Section: Introductionmentioning
confidence: 99%
“…CISe semiconductor is a crucial material as an absorber layer and offers an advantage of lowcost flexible thin-film solar cells [14]. Chemical bath deposition (CBD), Electrodeposition (ED) [26][27][28][29][30][31][32][33][34][35][36][37][38][39], Successive Ionic Layer Adsorption and Reaction (SILAR), Spray pyrolysis (SP), three-source evaporation [40][41][42][43][44][45][46][47][48], laser annealing [49][50], flash evaporation [51][52][53], spray pyrolysis [54][55][56][57][58][59], sputtering [60][61][62][63][64][65][66][67][68][69], liquid phase epitaxy [70][71],Electrodeposition [72][73...…”
Section: Introductionmentioning
confidence: 99%
“…The ternary I−III−VI 2 semiconductor of CuInSe 2 has advantageous applications in thin-film solar cells because of its large absorption coefficient, low band gap (∼1.05 eV), and good radiation stability. Films of CuInSe 2 have been fabricated with various methods, such as molecular beam epitaxy, liquid-phase epitaxy, and halogen vapor phase epitaxy . Polycrystalline CuInSe 2 films have also been grown by metal−organic chemical vapor deposition using separate Cu and In precursors .…”
Section: Introductionmentioning
confidence: 99%
“…To give an example, films of CuInSe 2 have been grown using such methods as molecular beam epitaxy (MBE) [38][39][40], liquid-phase epitaxy [41], and halogen vapor phase epitaxy (VPE) [42]. But this methods are quite complicated, so the synthesis of core/shell materials based on an CIS core and organic surfactant as shell can be an interesting alternative on the development of the photovoltaic devices.…”
Section: Synthesis Strategies Of Core/shell Materialsmentioning
confidence: 99%