Liquid phase epitaxial growth and luminescence of InAs1-x-ySbxPyp-n junctions

Rowe, Derek; Krier, A.

doi:10.1088/0022-3727/26/7/015

Cited by 6 publications

(2 citation statements)

References 14 publications

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“…Recent data on MOCVD-grown AIGaAsSb/GaSb TPV cells without the diffused emitter also showed the same value [12]. Surface recombination between 1 05-I O7 cm/sec was determined on InGaSb surfaces in MOCVD-grown InGaSb structures [13]. However, despite a high surface recombination in GaSb, optimizing of the diffusion profiles can essentially decrease its influence.…”

Section: Introductionmentioning

confidence: 66%

New High-Performance GaSb-Based Thermophtovolatic Devices. Final Report

Mauk¹

2002

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Project Summary: Thermophotovoltaic (TPV) materials and devices were developed for the direct conversion of heat (infrared thermal radiation) to electricity. State-of-the-art TPV cells in the quaternary alloys of AlGaAsSb and InGaAsSb lattice-matched to GaSb substrates were made by liquid-phase epitaxy (LPE). A 5-element series-interconnected TPV array made by bonding thick epitaxial device structures on insulating substrates was demonstrated. Simple zinc diffusion processes, in combination with anodic oxidation, were developed to form optimized p n junction profiles. A new class of low-bandgap (0.35 to 0.5 eV) TPV cells made in InAsSbP was developed. DISCLAIMERThis report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency Thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States Government or any agency thereof. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof. DISCLAIMERPortions of this document may be illegible in electronic image products. Images are produced from the best available original document. 2This report provides a chronological narrative of AstroPower/JPL progress in developing several new types of low-bandgap (long wavelength) thermophotovoltaic (TPV) devices. The initial focus of the work was to improve the performance of lnGaAsSb cells made by liquid-phase epitaxy on GaSb substrates. The baseline device developed in the Phase I effort advanced from simple p-n homojunction designs to double heterostructure AIGaAsSb/lnGaAsSb with backside mirrors to effect photon recycling. This was followed by development of techniques for series interconnection to make high-voltage InGaAsSb minimodules by bonding thick epitaxial device structures on isulating surrogate substrates. There was also an effort, pursued in the interest of lowering costs, to realize a simplified version of the device using zinc diffusion. Zinc diffusion, in combination with controlled etching and anodic oxidation, could be used to tailor the emitter doping profile and achieve TPV performance comparable to that of more sophisticated double heterostructures. Several theoretical studies by other groups have suggested lower bandgaps to better utilize the thermal radiation of heat sources with relatively low temperatures (e 1200 "C). Top this end, TPV cells were developed in InAsSbP alloys, resulting in devices with spectral responses at wavelengths longer than 3 microns.TPV cell pe...

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Section: Introductionmentioning

confidence: 66%

New High-Performance GaSb-Based Thermophtovolatic Devices. Final Report

Mauk¹

2002

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“…Clearly the requirements necessary for cryogenic cooling make such devices undesirable in practice for a portable gas-detection system. By comparison with the above, there are only a few reports in the literature of electroluminescence [15][16][17][18] from uncooled m s operating at long wavelengths. In the present work an investigation of the electrical and luminescence properties of C d -e e d infrared LEDS fabricated from m-grown InAsSbP, and emitting in the 3.3 pm region at room temperature, was made.…”

Section: Introductionmentioning

confidence: 99%