Liquid-phase electroepitaxy: Growth kinetics

Jastrzȩbski, L.; Łagowski, J.; Gatos, H. C.; Witt, A. F.

doi:10.1063/1.324557

Cited by 82 publications

(36 citation statements)

References 20 publications

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“…(1). It indicates that the calculated value of 0.24 1C at 10 A cm À 2 at 800 1C is in good agreement with the experimentally measured value by 0.28 1C [27]. Peltier's cooling at the growth interface is responsible for supersaturating the solution for epitaxial growth.…”

Section: Star Pattern Growth By Cclpesupporting

confidence: 78%

Orientation-dependent epitaxial growth of GaAs by current-controlled liquid phase epitaxy

Mouleeswaran

Koyama

Hayakawa

2011

Journal of Crystal Growth

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a b s t r a c tThe orientation dependence of the selective epitaxial growth of Gallium Arsenide (GaAs) has been investigated to achieve a thick epitaxial layer for application to X-ray detectors. Selective epitaxial growth was carried out on patterned GaAs with [0 1 1], [0 1 2], [0 1 0], [0 1 À 2], [0 1 À 1] and their equivalent seed orientations by current-controlled liquid phase epitaxy (CCLPE). SiO 2 was used as a mask layer to fabricate the various seed orientations on the Si-doped GaAs (1 0 0) substrate and various growth periods and current densities were considered. Solute transport in the solution was enhanced by the electromigration of solute by an applied DC electric current, which caused an incremental growth in vertical and lateral directions in all orientations. The highest vertical thickness of 268 mm in the [0 1 À 1] orientation and the largest lateral growth of 318 mm in the [0 1 2] orientation were achieved at 7.5 A cm À 2 current density for 6 h. The seed aligned in the [0 1 2] orientation was favorable for high lateral growth of GaAs. The [0 1 1], [0 1 0] and [0 1 À 2] seed orientations were suitable for application in a GaAs X-ray detector.

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Section: Star Pattern Growth By Cclpesupporting

confidence: 78%

Orientation-dependent epitaxial growth of GaAs by current-controlled liquid phase epitaxy

Mouleeswaran

Koyama

Hayakawa

2011

Journal of Crystal Growth

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“…At the liquid solution-crystal interface, the Peltier effect is accounted in the boundary condition for temperature by direct contribution to the heat balance equation [11,12] k s @T s @n…”

Section: Model and The Solution Methodsmentioning

confidence: 99%

Time dependent simulations of the growth of III–V crystals by the liquid phase electroepitaxy

Żytkiewicz

Strąk

Krukowski

2011

Journal of Crystal Growth

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“…At the liquid solution-crystal interface, the Peltier effect is accounted in the boundary condition for temperature by direct contribution to the heat balance equation [11,12]:…”

Section: The Model and The Solution Methodsmentioning

confidence: 99%

Numerical analysis of growth kinetics of bulk III‐V crystals grown by liquid phase electroepitaxy

Strąk¹,

Żytkiewicz²,

Sakowski³

et al. 2010

Cryst. Res. Technol.

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Results of time-dependent simulations of growth of bulk binary III−V crystals by current controlled liquid phase electroepitaxy (LPEE) are presented using GaAs as example. Without any electrical current the LPEE system is isothermal, kept at 1073 K, thus no growth occurs. The electric current density of 10 A/cm 2 leads to ohmic heating of the entire system, Peltier cooling of the Ga-GaAs(seed) interface and electromigration of As species in liquid Ga. Neither Peltier nor Joule effects are considered at the source/solution interface since in the configuration chosen the electric current bypasses the source crystal. The Peltier-induced cooling and electromigration of As induce growth of GaAs, originally at the rate of 0.5 μm/min. As the growth proceeds, the Peltier cooling is overcompensated by Joule heating, which leads to the reduction of growth rate and finally to standstill. It is shown that the LPEE growth is strongly time dependent, leading to the change of crystallization front, reflecting the fastest growth rate at the center of the crucible and the slowest, close to the crucible wall.

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Liquid-phase electroepitaxy: Growth kinetics

Cited by 82 publications

References 20 publications

Orientation-dependent epitaxial growth of GaAs by current-controlled liquid phase epitaxy

Orientation-dependent epitaxial growth of GaAs by current-controlled liquid phase epitaxy

Time dependent simulations of the growth of III–V crystals by the liquid phase electroepitaxy

Numerical analysis of growth kinetics of bulk III‐V crystals grown by liquid phase electroepitaxy

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