Liquid-Modulated Photothermal Phenomena in Porous Silicon Nanostructures Studied by μ-Raman Spectroscopy

Makukha, Oksana; Lysenko, Ivan; Belarouci, Ali

doi:10.3390/nano13020310

Cited by 8 publications

(5 citation statements)

References 39 publications

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“…While the quantum-confinement model remains a cornerstone, ongoing research has expanded our knowledge by investigating the influence of various factors such as surface passivation, surface recombination velocities and fabrication techniques on the tuning of the PL properties. These findings paved the way for diverse applications utilizing PSi as a substrate, spanning technologies such as light-emitting diodes [ 4 , 5 ], photodetectors [ 6 , 7 , 8 , 9 , 10 , 11 ], solar cells [ 12 , 13 , 14 , 15 , 16 ] and biomedical applications [ 17 , 18 , 19 , 20 ].…”

Section: Introductionmentioning

confidence: 99%

Exploring the Influence of Solvents on Electrochemically Etched Porous Silicon Based on Photoluminescence and Surface Morphology Analysis

Tsai,

Lee,

Lin

et al. 2024

Materials

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Porous silicon (PSi) has promising applications in optoelectronic devices due to its efficient photoluminescence (PL). This study systematically investigates the effects of various organic solvents and their concentrations during electrochemical etching on the resulting PL and surface morphology of PSi. Ethanol, n-butanol, ethylene glycol (EG) and N,N-dimethylformamide (DMF) were employed as solvents in hydrofluoric acid (HF)-based silicon etching. The PL peak position exhibited progressive blue-shifting with increasing ethanol and EG concentrations, accompanied by reductions in the secondary peak intensity and emission linewidth. Comparatively, changes in n-butanol concentration only slightly impacted the main PL peak position. Additionally, distinct morphological transitions were observed for different solvents, with ethanol and n-butanol facilitating uniform single-layer porous structures at higher concentrations in contrast to the excessive etching caused by EG and DMF resulting in PL quenching. These results highlight the complex interdependencies between solvent parameters such as polarity, volatility and viscosity in modulating PSi properties through their influence on surface wetting, diffusion and etching kinetics. The findings provide meaningful guidelines for selecting suitable solvent conditions to tune PSi characteristics for optimized device performance.

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Section: Introductionmentioning

confidence: 99%

Exploring the Influence of Solvents on Electrochemically Etched Porous Silicon Based on Photoluminescence and Surface Morphology Analysis

Tsai,

Lee,

Lin

et al. 2024

Materials

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“…The disadvantage of the method lies in the lasers to be used, whose necessary power can range up to 500 mW and collide with explosion protection requirements (DIN EN 60079-28) [ 18 ]. Where possible, however, significantly lower laser powers are used today, in the range of 10 mW or even down to 0.1 mW [ 19 , 20 ]. High laser powers can also cause decomposition of the target in light-sensitive samples [ 17 ].…”

Section: Introductionmentioning

confidence: 99%

Raman Spectroscopy of Glass Beads in Ammonium Nitrate Solution and Compensation of Signal Losses

Spoor,

Rädle,

Repke

2024

Sensors

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In the present study, the influence of disperse systems on Raman scattering was investigated. How an increasing particle concentration weakens the quantitative signal of the Raman spectrum is shown. Furthermore, the change in the position of the optimal measurement point in the fluid was considered in detail. Additional transmission measurements can be used to derive a simple and robust correction method that allows the actual concentration of the continuous phase to be determined with a standard deviation of 2.6%.

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“…Therefore, the preparation of porous silicon has always been the focus of attention from scientific researchers. The traditional method is to form porous silicon on the silicon surface by chemical or electrochemical etching [10][11][12][13]. A novel preparation method was reported by the Yang group in 2010, they use nanosphere or block-copolymer lithography with deep reactive ion etching on thin monocrystalline silicon films to prepare porous silicon with uniform pore spacing of 55,140 or 350 nm [9,14].…”

Section: Introductionmentioning

confidence: 99%

The Process and Mechanism of Preparing Nanoporous Silicon: Helium Ion Implantation

Wang

Zhu

et al. 2023

Nanomaterials

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Ion implantation is an effective way to control performance in semiconductor technology. In this paper, the fabrication of 1~5 nm porous silicon by helium ion implantation was systemically studied, and the growth mechanism and regulation mechanism of helium bubbles in monocrystalline silicon at low temperatures were revealed. In this work, 100 keV He ions (1~7.5 × 1016 ions/cm2) were implanted into monocrystalline silicon at 115 °C~220 °C. There were three distinct stages in the growth of helium bubbles, showing different mechanisms of helium bubble formation. The minimum average diameter of a helium bubble is approximately 2.3 nm, and the maximum number density of the helium bubble is 4.2 × 1023 m−3 at 175 °C. The porous structure may not be obtained at injection temperatures below 115 °C or injection doses below 2.5 × 1016 ions/cm2. In the process, both the ion implantation temperature and ion implantation dose affect the growth of helium bubbles in monocrystalline silicon. Our findings suggest an effective approach to the fabrication of 1~5 nm nanoporous silicon, challenging the classic view of the relationship between process temperature or dose and pore size of porous silicon, and some new theories are summarized.

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Liquid-Modulated Photothermal Phenomena in Porous Silicon Nanostructures Studied by μ-Raman Spectroscopy

Cited by 8 publications

References 39 publications

Exploring the Influence of Solvents on Electrochemically Etched Porous Silicon Based on Photoluminescence and Surface Morphology Analysis

Exploring the Influence of Solvents on Electrochemically Etched Porous Silicon Based on Photoluminescence and Surface Morphology Analysis

Raman Spectroscopy of Glass Beads in Ammonium Nitrate Solution and Compensation of Signal Losses

The Process and Mechanism of Preparing Nanoporous Silicon: Helium Ion Implantation

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