Liquid-delivery MOCVD: chemical and process perspectives on ferro-electric thin film growth

Roeder, Jeffrey F.; Baum, Thomas H.; Bilodeau, S.; Stauf, Gregory T.; Ragaglia, Craig; Russell, Michael W.; Buskirk, Peter C. Van

doi:10.1002/1099-0712(200005/10)10:3/5<145::aid-amo416>3.0.co;2-2

Cited by 40 publications

(36 citation statements)

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“…20 The composition and microstructure of the as-deposited PZT films have been extensively characterized in earlier work. 21 In brief, the Ti/Zr ratio in these films was determined to be 65/35 and was independent of depth within the film.…”

Section: Methodsmentioning

confidence: 99%

Effect of applied mechanical strain on the ferroelectric and dielectric properties of Pb(Zr0.35Ti0.65)O3 thin films

Kelman

McIntyre

Hendrix

et al. 2003

Journal of Applied Physics

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A wafer bending method has been devised to impose biaxial strains on Pb(Zr0.35Ti0.65)O3 (PZT) thin films ranging in thickness from 700 to 4000 Å grown by metal-organic chemical vapor deposition. The ferroelectric and dielectric properties of PZT capacitors were investigated while the film was placed under biaxial tension. It was observed that biaxial strains as small as 0.08% can reversibly reduce the remanent polarization of PZT films by 12 to 14% for all film thicknesses. The small-signal capacitance measured at voltages significantly larger than the switching voltage increased with increasing biaxial tension. These observations present clear evidence of room temperature strain accommodation in PZT thin films by reversible 90° domain wall motion that changes the volume fraction of the film that switches during electrical testing.

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Section: Methodsmentioning

confidence: 99%

Effect of applied mechanical strain on the ferroelectric and dielectric properties of Pb(Zr0.35Ti0.65)O3 thin films

Kelman

McIntyre

Hendrix

et al. 2003

Journal of Applied Physics

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“…Influence of deposition conditions in liquid-delivery MO-CVD can be shown by some examples: BST films were deposited at 640 C on Pt/SiO 2 /Si substrates without any thermal treatments after the deposition process [192]. For film compositions of (Ba þ Sr)/Ti < 1 adjusted by the concentration of the components in the solution smooth, columnar, crystalline perovskite thin films with (100) preferred orientation were deposited.…”

Section: Metal-organic Vapour Phase Deposition (Mo-cvd)mentioning

confidence: 99%

Epitaxial growth of ferroelectric oxide films

Schwarzkopf

Fornari

2006

Progress in Crystal Growth and Characterization of Materials

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“…3 C CO CH CO CH(CH 3 ) 2 , Pr: Propyl). The last one shows high growth rates at low temperatures, especially in contrast to the often used Zr (DPM) 4 [9]. The efficiency of this new Zr precursor under given processing conditions is even higher than that of the Ti one [10].…”

Section: Methodsmentioning

confidence: 99%

MOCVD GROWTH OF (Pb,Ba)(Zr,Ti)O₃ THIN FILMS FOR MEMORY APPLICATIONS

Puchalla¹,

Hoffmann‐Eifert²,

Cattaneo³

et al. 2005

Integrated Ferroelectrics

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We are reporting on the modification of Pb(Zr,Ti)O 3 (PZT) thin films by substitution of Ba for Pb. The (Pb,Ba)(Ti,Zr)O 3 (PBZT) films are grown on iridium coated silicon substrates by a liquid delivery MOCVD technique. Four separate solutions of Pb (DPM) 2 , Ba (DPM) 2 , Ti (O i Pr) 2 (DPM) 2 , and a new zirconium precursor Zr (IBPM) 4 were used. A PZT(30/70) film of 150 nm thickness shows a P r value of 35 µC/cm 2 , and E c of 90.4 kV/cm. Ba substitution leads to suppressed tendency for phase separation, more homogeneous surface morphology, smaller grain sizes and easier growth with respect to adjustment of stoichiometry. PBZT films show low dielectric losses of 0.03 and high permittivity values of up to 1000. A decrease of the coercive field could not be observed.

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Liquid-delivery MOCVD: chemical and process perspectives on ferro-electric thin film growth

Cited by 40 publications

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Effect of applied mechanical strain on the ferroelectric and dielectric properties of Pb(Zr0.35Ti0.65)O3 thin films

Effect of applied mechanical strain on the ferroelectric and dielectric properties of Pb(Zr0.35Ti0.65)O3 thin films

Epitaxial growth of ferroelectric oxide films

MOCVD GROWTH OF (Pb,Ba)(Zr,Ti)O₃ THIN FILMS FOR MEMORY APPLICATIONS

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Liquid-delivery MOCVD: chemical and process perspectives on ferro-electric thin film growth

Cited by 40 publications

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Effect of applied mechanical strain on the ferroelectric and dielectric properties of Pb(Zr0.35Ti0.65)O3 thin films

Effect of applied mechanical strain on the ferroelectric and dielectric properties of Pb(Zr0.35Ti0.65)O3 thin films

Epitaxial growth of ferroelectric oxide films

MOCVD GROWTH OF (Pb,Ba)(Zr,Ti)O3 THIN FILMS FOR MEMORY APPLICATIONS

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MOCVD GROWTH OF (Pb,Ba)(Zr,Ti)O₃ THIN FILMS FOR MEMORY APPLICATIONS