Linkage effects of triphenylamine-based aromatic polymer electrets on electrical memory performance

Cheng, Sheng‐Wen; Chien, Yu-Hsin Chang; Huang, Teng-Yung; Liu, Cheng‐Liang; Liou, Guey‐Sheng

doi:10.1016/j.polymer.2018.06.040

Cited by 20 publications

(18 citation statements)

References 53 publications

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“…Alternatively, polymer electret is attractive for charge‐trap flash memory as a result of facile and low‐cost solution‐processing uniform charge storage layer via spin‐coating approach and tunable bandgap (controllable energy barrier of charge injection between charge storage layer and semiconducting active layer) . Since the surface or interface of the polymer layer plays a significant role in capturing and releasing charge carriers, suitable orthogonal solvents of the polymer solution, appropriate film thickness, smooth layer morphology and interfaces between layers are highly demanded for high‐performance flash memories.…”

Section: Functional Applications Of Ambipolar Transistorsmentioning

confidence: 99%

Recent Advances in Ambipolar Transistors for Functional Applications

Ren

Yang

Zhou

et al. 2019

Adv Funct Materials

169

139

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Ambipolar transistors represent a class of transistors where positive (holes) and negative (electrons) charge carriers both can transport concurrently within the semiconducting channel. The basic switching states of ambipolar transistors are comprised of common off-state and separated on-state mainly impelled by holes or electrons. During the past years, diverse materials are synthesized and utilized for implementing ambipolar charge transport and their further emerging applications comprising ambipolar memory, synaptic, logic, and light-emitting transistors on account of their special bidirectional carrier-transporting characteristic. Within this review, recent developments of ambipolar transistor field involving fundamental principles, interface modifications, selected semiconducting material systems, device structures, ambipolar characteristics, and promising applications are highlighted. The existed challenges and prospective for researching ambipolar transistors in electronics and optoelectronics are also discussed. It is expected that the review and outlook are well timed and instrumental for the rapid progress of academic sector of ambipolar transistors in lighting, display, memory, as well as neuromorphic computing for artificial intelligence.

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Section: Functional Applications Of Ambipolar Transistorsmentioning

confidence: 99%

Recent Advances in Ambipolar Transistors for Functional Applications

Ren

Yang

Zhou

et al. 2019

Adv Funct Materials

169

139

View full text Add to dashboard Cite

show abstract

“…Tsai et al. [ 71,72 ] also reported the arrangement of hydroxyl groups in PVA was related to the hysteresis curve of the memory device. When an electric field was applied to the device, pentacene and the dipole on PVA surface would capture charges and hysteresis would be found.…”

Section: Function Of the Interface In Three‐terminal Organic Memory Dmentioning

confidence: 99%

Interface Modification in Three‐Terminal Organic Memory and Synaptic Device

Zheng

Liao

Han

et al. 2020

Adv Elect Materials

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including floating-gate memory devices, [13] polymer memory devices, [14] and ferroelectric memory devices. [9] Generally, the structure of three-terminal organic memory devices is similar to the OFET except that a floating gate layer is added to the former between the semiconductor layer and the dielectric layer, through which the charges can be trapped or the polarization can be changed when the operation voltage is applied on the electrodes. Subsequently it leads to threshold voltage shift. It is reported that the electrical properties of OFET can be improved by modifying the interface between semiconductor layer and dielectric layer [15-17] since the charge transport is correlated to the interfaces. In view of this, interface engineering is in high demand to obtain excellent electrical characteristics. For three-terminal organic memory devices, the characteristics of the interface such as interfacial adhesion, [18] morphology, [19] surface diploes, energy level alignment, [20] hydrophilic/hydrophobic property [21] affect the charge transport of device. To control the interfacial property, some methods of interface modification are proposed which includes 1) inserting SAMs or polymer layer as the interfacial layer between dielectric layer and semiconductor layer and 2) pretreating the dielectric layer with ultraviolet-ozone (UVO), plasma, [22] or oxygen content technology. [23,24] Among these methods, SAMs are the most common and effective way to modify the interface because the interfacial properties such as morphology, hydrophilic/hydrophobic, and so on are adjustable by designing specific self-assembled molecules. [25] Nowadays, due to the physical separation of the memory unit from the central processor, the data shuttling between them consumes a large amount of energy with lower work efficiency, inducing memory wall effect. [26] Neuromorphic computing, by contrast, can break the "Von Neumann bottleneck" since these computers can simultaneously mimic the spatiotemporal learning and inference of the synapse in the human brain. [27] Three-terminal organic memory devices can be used to simulate excitatory post-synaptic current/potential (EPSC/ EPSP), synaptic weight, short-term plasticity (STP), long-term plasticity (LTP), and other functions of the artificial synapses, making artificial synapses a very popular research topic. [28,29] Similar to the mechanism of three-terminal organic memory devices, the properties of artificial synaptic devices based on three-terminal structure are also related to the interface between dielectric layer/semiconductor layer and source-drain Interface is a valuable research area for the three-terminal organic memory device, which is an important member of memory family, as the transport and trapping operation of charge carriers are related to the interfaces between semiconductor/dielectric layers and source-drain electrodes/semiconductor layer. This progress report highlights the developments of the interface effect for three-terminal organic memory devices. First, the goals of...

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“…Among them, organic field‐effect transistors (OFETs) based nonvolatile memories (NVMs) exhibited the most attractive features owing to their good processing compatibility with integrated circuits, nondestructive reading‐out, and potential multi‐bit data storage in one cell . Depending on the mechanism of data storage, OFET‐NVM devices are divided into two types: charge‐trapping type and polarization‐type …”

Section: Introductionmentioning

confidence: 99%

“…Additionally, the hydrophilic moieties could increase the bulk conductivity, thereby reducing the retention time of the stored charges in the electrets . Some hydrophobic polymer electrets with a relatively small band gap have been demonstrated to possess high charge storage capability for a large memory window ( ΔV T ) . However, those hydrophobic electrets are generally dissolved in organic solvents which are used to process organic semiconductor and other polymer insulator films by a solution method.…”

Section: Introductionmentioning

confidence: 99%

“…However, those hydrophobic electrets are generally dissolved in organic solvents which are used to process organic semiconductor and other polymer insulator films by a solution method. On the other hand, the small band gap in those electrets means small injection barrier for charge carriers from both semiconducting channel and electrodes, which can induce an obvious leakage current and thus decrease the retention time of the stored charges . Therefore, those hydrophobic electrets were normally fabricated on a thick rigid SiO 2 gate dielectric layer for processing compatibility and extending the retention time in the OFET‐NVMs, which is not suitable for flexible memory.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Organic Field‐Effect Transistor Nonvolatile Memories with Hydroxyl‐Rich Polymer Materials as Functional Gate Dielectrics

Zou

Guo

et al. 2019

Adv Elect Materials

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Organic field‐effect transistor‐ (OFET‐) based nonvolatile memories (NVMs) are becoming more important as a core component in flexible and wearable electronics. New polymer materials containing abundant hydroxyl groups are synthesized and employed as the functional gate dielectric for OFET‐NVM devices. The dependence of the memory performances on the hydroxyl content of the polymers is investigated. A variety of gate dielectric structures are proposed to verify that the memory mechanism originates from the reversible remnant polarization of hydroxyl groups in the polymers and to improve the retention capability of the OFET‐NVM devices by preventing the charge trapping in the polymers at the reading state. As a result, good memory performance is achieved with a large memory window of 33.7 V and memory on/off ratio of 1.1 × 104 on average, long retention properties with clearly distinguishable binary states over 10 000 s, and reliable writing/erasing switching endurance over 200 cycles in the optimal OFET‐NVM device, in which the polymer with the most hydroxyl content is sandwiched by two insulator films. Good strategies for the design of the polarizable polymers as the functional gate dielectrics and for improvement of OFET‐NVM device performance are demonstrated.

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Linkage effects of triphenylamine-based aromatic polymer electrets on electrical memory performance

Cited by 20 publications

References 53 publications

Recent Advances in Ambipolar Transistors for Functional Applications

Recent Advances in Ambipolar Transistors for Functional Applications

Interface Modification in Three‐Terminal Organic Memory and Synaptic Device

Organic Field‐Effect Transistor Nonvolatile Memories with Hydroxyl‐Rich Polymer Materials as Functional Gate Dielectrics

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