Link between low frequency noise and reliability of compound semiconductor HEMTs and HBTs

Labat, Nathalie; Malbert, Nathalie; Maneux, Cristell; Curutchet, Arnaud; Grandchamp, B.

doi:10.1109/icnf.2011.5994368

Cited by 8 publications

(3 citation statements)

References 34 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Low frequency noise and random telegraph signal are sensitive metrics for determining defects in the active devices [13,14,15], as it can reveal defects prior to any stress application, while most electrical characterization setups are not able to track those defects (except for DLTS measurement techniques). For long-term operation, the main reliability issue in SiGe HBTs is the cumulative degradation of the base current that occurs under combined high emitter current and high collector voltage stress.…”

Section: Electrical and Lfn Measurements And Models For Reliability Cmentioning

confidence: 99%

Non-destructive techniques for evaluating the reliability of high frequency active devices

Tartarin

2019

Microelectronics Reliability

View full text Add to dashboard Cite

SiGe and GaN technologies have achieved rapid development over the last two decades. High level of RF circuit integration on Si low cost substrates open the way for large development of SiGe HBTs, while needs for high power density make GaN HEMT a key technology for solid state power modules. As both of these technologies achieve very elevated frequencies, they become strong contenders to GaAs technologies. Then reliability studies are needed to improve the process at the lower technology readiness level scale, and to stabilize the technological process till the final qualification step. To make an efficient diagnostic on the causal origin of the physical root mechanisms involved during the application of a stress, a multi-tool approach is mandatory to secure the diagnostic. In this paper, case studies on SiGe HBT and GaN HEMT stressed devices are proposed through the cross-analysis of low frequency noise spectral densities, of electrical transient measurements, and of TCAD simulations.

show abstract

Section: Electrical and Lfn Measurements And Models For Reliability Cmentioning

confidence: 99%

Non-destructive techniques for evaluating the reliability of high frequency active devices

Tartarin

2019

Microelectronics Reliability

View full text Add to dashboard Cite

show abstract

“…Instrumentation for a low frequency noise measurements (LFNM) is a tool used to characterize a wide spectrum of devices [1]. It is applied in many technologies, e.g., semiconductors [2,3], microelectronic materials [4][5][6][7][8][9][10], electro-chemical devices [11], photodetectors [12][13][14][15][16][17][18], as well as other materials [19][20][21]. In this research, some special amplifiers (ultra-low noise amplifier -ULNA) are widely used.…”

Section: Introductionmentioning

confidence: 99%

Metrology and Measurement Systems

Achtenberg,

Mikołajczyk,

Bielecki

2020

View full text Add to dashboard Cite

The paper presents a low noise voltage FET amplifier for low frequency noise measurements. It was built using two stages of an op amp transimpedance amplifier. To reduce voltage noise, eight-paralleled low noise discrete JFETs were used in the first stage. The designed amplifier was then compared to commercial ones. Its measured value of voltage noise spectral density is around 24 nV/ √ Hz, 3 nV/ √ Hz, 0.95 nV/ √ Hz and 0.6 nV/ √ Hz at the frequency of 0.1, 1, 10 and 100 Hz, respectively. A −3 dB frequency response is from ∼ 20 mHz to ∼ 600 kHz.

show abstract

“…However, their performances are still restricted by frequency-dependent dispersion mechanisms and permanent degradation mechanisms, which act as the detriment of the predicted and long-term power performances. [1] Low frequency noise (LFN) in HEMT is important since it becomes an important limitation of the device performances. These mechanisms originate either from trapping-detrapping processes in surface states and deep traps associated with material quality induced by piezoelectric polarization effects [2,3] or from permanent degradation induced by hot carrier interaction with trap sites occurring in the gatedrain region.…”

Section: Introductionmentioning

confidence: 99%

A unified drain current 1/fnoise model for GaN-based high electron mobility transistors

Liu¹,

Zhang²,

Ma³

et al. 2014

Chinese Phys. B

View full text Add to dashboard Cite

In this work, we present a theoretical and experimental study on the drain current 1/ f noise in the AlGaN/GaN high electron mobility transistor (HEMT). Based on both mobility fluctuation and carrier number fluctuation in a twodimensional electron gas (2DEG) channel of AlGaN/GaN HEMT, a unified drain current 1/ f noise model containing a piezoelectric polarization effect and hot carrier effect is built. The drain current 1/ f noise induced by the piezoelectric polarization effect is distinguished from that induced by the hot carrier effect through experiments and simulations. The simulation results are in good agreement with the experimental results. Experiments show that after hot carrier injection, the drain current 1/ f noise increases four orders of magnitude and the electrical parameter degradation ∆g m /g m reaches 54.9%. The drain current 1/ f noise degradation induced by the piezoelectric effect reaches one order of magnitude; the electrical parameter degradation ∆g m /g m is 11.8%. This indicates that drain current 1/ f noise of the GaN-based HEMT device is sensitive to the hot carrier effect and piezoelectric effect. This study provides a useful reliability characterization tool for the AlGaN/GaN HEMTs.

show abstract

Link between low frequency noise and reliability of compound semiconductor HEMTs and HBTs

Cited by 8 publications

References 34 publications

Non-destructive techniques for evaluating the reliability of high frequency active devices

Non-destructive techniques for evaluating the reliability of high frequency active devices

Metrology and Measurement Systems

A unified drain current 1/fnoise model for GaN-based high electron mobility transistors

Contact Info

Product

Resources

About