Linewidth of the Raman features of individual single-wall carbon nanotubes

Jório, Ado; Fantini, C.; Dantas, M. S. S.; Pimenta, M. A.; Filho, A. G. Souza; Samsonidze, Ge. G.; Brar, Victor W.; Dresselhaus, G.; Dresselhaus, M. S.; Swan, Anna K.; Ünlü, M. Selim; Goldberg, Bennett B.; Saito, Riichiro

doi:10.1103/physrevb.66.115411

Cited by 195 publications

(171 citation statements)

References 23 publications

Supporting

Mentioning

144

Contrasting

Order By: Relevance

“…This statement is further supported by checking the observed splitting of the G band as reported in Ref. 25. We can observe in the upper trace of Fig.…”

Section: G-band Analysissupporting

confidence: 68%

See 1 more Smart Citation

Resonance Raman scattering studies inBr2-adsorbed double-wall carbon nanotubes

et al. 2006

Self Cite

View full text Add to dashboard Cite

The vibrational and electronic properties of Br 2 -adsorbed double-wall carbon nanotubes ͑DWNTs͒ were investigated by resonance Raman scattering. Special attention was given to distinguish the behavior between S/M and M/S outer/inner semiconducting ͑S͒ and metallic ͑M͒ tubes. By using three laser excitation energies 2.33, 1.96, and 1.58 eV, resonance Raman spectra were obtained for the DWNTs before and after bromine adsorption, and also for the Br-Br molecular resonance, thereby facilitating the study of charge transfer between the DWNTs and the bromine. It was found that Br 2 molecules act as acceptors and that metallic nanotubes are specially sensitive to the presence of Br 2 molecules even when they constitute the inner tubes of DWNTs.

show abstract

“…This statement is further supported by checking the observed splitting of the G band as reported in Ref. 25. We can observe in the upper trace of Fig.…”

Section: G-band Analysissupporting

confidence: 68%

“…This splitting is in agreement with the diameter dependence of these modes that was previously reported. 25 We thus conclude that the spectrum in Fig. 6 is dominated by the inner semiconducting tubes.…”

Section: G-band Analysismentioning

confidence: 83%

Resonance Raman scattering studies inBr2-adsorbed double-wall carbon nanotubes

et al. 2006

Self Cite

View full text Add to dashboard Cite

show abstract

“…1c), confirmed by preservation of the radial breathing like mode (398 cm -1 ) characteristic for n=7 GNRs. An observed increase in the D peak intensity (1343 cm -1 ) and slight overall linewidth broadening may be the result of reduced substrate screening effects 19 or defects induced during transfer. This transfer process is also compatible with any substrate resistant to organic solvents such as acetone.…”

mentioning

confidence: 99%

Bottom-up graphene nanoribbon field-effect transistors

Bennett¹,

Pedramrazi²,

Madani³

et al. 2013

Applied Physics Letters

237

277

View full text Add to dashboard Cite

Recently developed processes have enabled bottom-up chemical synthesis of graphene nanoribbons (GNRs) with precise atomic structure. These GNRs are ideal candidates for electronic devices because of their uniformity, extremely narrow width below 1 nm, atomically perfect edge structure, and desirable electronic properties. Here, we demonstrate nano-scale chemically synthesized GNR field-effect transistors, made possible by development of a reliable layer transfer process. We observe strong environmental sensitivity and unique transport behavior characteristic of sub-1 nm width GNRs.

show abstract

“…RBM peaks have been observed with different Raman shifts from 190 cm -1 to the lower limit 9 of 120 cm -1 , which is imposed by our Raman notch filter. Assuming a standard formula for converting RBM peaks to nanotube diameter, 20) the SWNTs have diameters in the range 1.3-2.0 nm. Despite considerable effort we have been unable to detect the disorder induced D-band feature around 1350 cm -1 as shown in Fig.…”

Section: Silica Nanowires Grown From Ge Nanoparticlesmentioning

confidence: 99%

Metal-Catalyst-Free Growth of Silica Nanowires and Carbon Nanotubes Using Ge Nanostructures

Uchino

Hutchison

Ayre

et al. 2011

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The use of Ge nanostructures is investigated for the metal-catalyst-free growth of silica nanowires and carbon nanotubes (CNTs). Silica nanowires with diameters of 10-50 nm and lengths of ≤ 1 µm were grown from SiGe islands, Ge dots, and Ge nanoparticles. High-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS) reveal that the nanowires grow from oxide nanoparticles on the sample surface. We propose that the growth mechanism is thermal diffusion of oxide through the GeO 2 nanostructures. CNTs with diameters 0.6-2.5 nm and lengths of less than a few µm were similarly grown by chemical vapor deposition from different types of Ge nanostructures. Raman measurements show the presence of radial breathing mode peaks and the absence of the disorder induced D-band, indicating single walled CNTs with a low defect density. HRTEM images reveal that the CNTs also grow from oxide nanoparticles, comprising a mixture of GeO 2 and SiO 2

show abstract

Linewidth of the Raman features of individual single-wall carbon nanotubes

Cited by 195 publications

References 23 publications

Resonance Raman scattering studies inBr2-adsorbed double-wall carbon nanotubes

Resonance Raman scattering studies inBr2-adsorbed double-wall carbon nanotubes

Bottom-up graphene nanoribbon field-effect transistors

Metal-Catalyst-Free Growth of Silica Nanowires and Carbon Nanotubes Using Ge Nanostructures

Contact Info

Product

Resources

About