Linewidth for interconduction subband transition in Si/Si1−xGex quantum wells

Mukhopadhyay, Banibrata; Basu, P. K.

doi:10.1002/pssb.200302003

Cited by 5 publications

(3 citation statements)

References 24 publications

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“…[20][21][22] Although we found ⌫ values of the same order of magnitude of those obtained theoretically, the calculations predict a stronger dependence of ⌫ on the well width. In particular, increased ⌫ values are expected for W Ͻ 6 nm.…”

Section: A Experimental Resultssupporting

confidence: 59%

Terahertz intersubband absorption and conduction band alignment inn-type Si/SiGe multiple quantum wells

et al. 2009

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Absorption due to conduction intersubband transitions is studied in n-type s-Si/SiGe multiquantum wells ͑MQW͒ of different well widths and barrier composition grown by UHV-chemical vapor deposition ͑CVD͒. The measured intersubband transition energies are compared with the theoretical results of a tight-binding model which provides the electronic band structure of the complete MQW system throughout the whole Brillouin zone. Our findings demonstrate both the high quality of the CVD grown MQWs and the effectiveness of the adopted tight-binding model in describing band profiles and electronic structures of SiGe multilayer systems. In particular we have evaluated the conduction band offsets in the investigated structures.

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Section: A Experimental Resultssupporting

confidence: 59%

Terahertz intersubband absorption and conduction band alignment inn-type Si/SiGe multiple quantum wells

et al. 2009

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“…Here, e is the elementary charge, is the reduced Planck constant, m z and m * are the out-of-plane and the inplane effective masses of the electron, f 10 is the oscillator strength for the transition E 0 → E 1 , E 10 = E 1 − E 0 is the intersubband energy separation (the ground state and the 1 st excited state), f (E) is the Fermi distribution function, 2Γ(E) means the full width at half maximum (FWHM) of the Lorentzian lineshape with energy E, and Γ(E) is the relaxation rate due to scattering processes given by [9,12,20] …”

Section: Basic Consideration For Calculating the Linewidth Of Intersumentioning

confidence: 99%

A novel approach to the evaluation of the interface roughness scattering form factor in intersubband transitions

Tiên

Thảo

Tuan

2014

Journal of the Korean Physical Society

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We propose a modification of the interface roughness (IFR) scattering form factor in intersubband transitions. We properly derived a formula for the form factor for IFR scattering in terms of the integrals of the envelope wave functions. This new form factor has a more global natural than the old one (proposed by Ando) and may be suitable for a wide range of applications. In this paper, we calculate and compare the absorption linewidths by applying of the old form factor and the new one. Different from previous calculations, for the same surface profile (Δ, Λ), the interface roughness scattering absorption linewidth calculated with the new form factor is twice as great as that calculated with the old one. Our numerical calculations may better explain the experimental results for the well-width dependence of the intersubband absorption linewidth.

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“…f (E) is the Fermi distribution function. Γ(E) means the full width at half maximum (FWHM) of the Lorentzian lineshape with energy E. Γ(E) is the relaxation rate due to scattering processes given by [9,12,20]…”

Section: Theoretical Calculation Basic Consideration For Calculatinmentioning

confidence: 99%

A novel approach to the evaluation of interface roughness scattering form factor in intersubband transitions

Tiên¹,

Thảo²,

Tuan³

2014

Nanoscale Systems: Mathematical Modeling, Theory and Applications

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Abstract:We propose a modi cation of the interface roughness (IFR) scattering form factor in intersubband transitions. We properly derived a formula for the form factor for IFR scattering in terms of the integrals of the envelope wave functions. This novel form factor is more global nature than the old one (proposed by Ando) and may be suitable for a wide range of applications. In this paper, we calculate and compare the absorption linewidth with the application of the old form factor and novel one. In di erent from previous calculations, with the same surface pro le (∆, Λ), the calculation results the interface roughness scattering absorption linewidth with the application of the new form factor is greater than twice the old one. Our numerical calculations may better explain the experimental results the well-width dependence of intersubband absorption linewidth.

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Linewidth for interconduction subband transition in Si/Si_1−xGe_x quantum wells

Cited by 5 publications

References 24 publications

Terahertz intersubband absorption and conduction band alignment inn-type Si/SiGe multiple quantum wells

Terahertz intersubband absorption and conduction band alignment inn-type Si/SiGe multiple quantum wells

A novel approach to the evaluation of the interface roughness scattering form factor in intersubband transitions

A novel approach to the evaluation of interface roughness scattering form factor in intersubband transitions

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