Linearity analysis of SiGe HBT amplifiers using a power-dependent coefficient Volterra technique

Deng, Jiang; Gudem, Prasad S.; Larson, L.E.

doi:10.1109/rawcon.2004.1389181

Cited by 4 publications

(4 citation statements)

References 9 publications

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“…Generally, under large signal operation, a PA suffers the nonlinearities to various degrees because of the contributions from active device parameters such as transconductance g m and base-collector capacitance C u [1,2]. The effects of device parameters on nonlinear behaviors of PAs can be described as a gain compression (AM/AM) and a positive phase shift (AM/PM).…”

Section: Introductionmentioning

confidence: 99%

“…In this article, an efficient method for analysis of microwave and MMICs including nonlinear components will be presented. The developed technique is based in a generalization of the iterative method, and it is an extension of previous works in the field of modeling of planar circuits [1][2][3][4], and as will be shown in this paper, it has been successfully applied to model non-linear transmission line (NLTL).…”

Section: Introductionmentioning

confidence: 99%

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A novel programmable predistortion circuit for broadband InGaP/GaAs HBT power amplifier

Gao

Wang

Zhang

et al. 2006

Micro & Optical Tech Letters

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A novel programmable MMIC predistortion circuit as an input stage of a broadband power amplifier (PA) is proposed and designed. By varying its reference voltage, one can adjust the magnitude of gain expansion and negative phase deviation to compensate the typical nonlinearities of the following stages in a PA, as well as temperature and fabrication variations. A gain expansion of 4–5 dB and a phase improvement of 5–6° are achieved in simulation. The measurement results show that P1dBis improved by 3 dB and adjacent channel power rejection ratio (ACPR) by 5 dBc at 27 dBm output power. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 141–143, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22080

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A novel programmable predistortion circuit for broadband InGaP/GaAs HBT power amplifier

Gao

Wang

Zhang

et al. 2006

Micro & Optical Tech Letters

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“…Usually, a PA is designed to have a high efficiency at the expense of linearity. However, such a PA generally suffers the nonlinearities to various degree due to the contributions from active device parameters such as transconductance g m and base-collector capacitance C bc under large signal operation [1][2]. The effects of device parameters on nonlinear behaviors of PAs can be described as gain compression (AM/AM) and positive phase shift (AM/PM).…”

Section: Introductionmentioning

confidence: 99%

A GaAs HBT programmable linear power amplifier

Gao

Zhang

Wang

et al. 2005

IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05.

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Abstract─A three-stage power amplifier with a novel programmable linearization input stage is proposed and designed. The input stage with dual feedback loops can predistort the input signal to compensate the gain compression and phase distortion attributed from the following stages. The power amplifier demonstrated a peak PAE of 62% at the output power of 30.5dBm operating at 1.75GHz to 1.95GHz. At 27dBm output power level the Adjacent Channel Power Rejection Ratio (ACPR) is less than -44dBc at a 1.25MHz offset frequency.

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“…The Volterra model has been widely used in the literature for linear and nonlinear analysis, distortion analysis, modal parameter estimation, behavioral modeling, etc. (see [6,[9][10][11]23]). Lind and Mortagua introduced an approach to improve the accuracy of the flutter speeds predicted by the fluttrometer.…”

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confidence: 99%

Wavelet Based Transistor Parameter Estimation Using Second Order Volterra Model

Majumdar

Parthasarathy

2011

Circuits Syst Signal Process

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In this paper, we present a wavelet based parameter estimation technique to estimate the transistor parameter in a common emitter amplifier circuit. The method uses the closed form expression of the second order Volterra model of a common emitter amplifier circuit derived using perturbation technique and the Ebers-Moll model. Simulations show that the proposed method gives more accurate parameter estimation with smaller data storage requirement as compared to the conventional least squares method because the wavelet method is adapted to time frequency resolution. Also, the parameter estimation using a nonlinear model gives an SNR improvement of approximately 2-dB compared to the parameter estimation using only a linear part of the model.

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Linearity analysis of SiGe HBT amplifiers using a power-dependent coefficient Volterra technique

Cited by 4 publications

References 9 publications

A novel programmable predistortion circuit for broadband InGaP/GaAs HBT power amplifier

A novel programmable predistortion circuit for broadband InGaP/GaAs HBT power amplifier

A GaAs HBT programmable linear power amplifier

Wavelet Based Transistor Parameter Estimation Using Second Order Volterra Model

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