Linear nonsaturating magnetoresistance in the Nowotny chimney ladder compound 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Ru</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Sn</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>

Wu, Beilun; Barrena, Víctor; Mompeán, F. J.; Garcı́a-Hernández, M.; Suderow, Hermann; Guillamón, Isabel

doi:10.1103/physrevb.101.205123

Cited by 6 publications

(6 citation statements)

References 50 publications

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“…Similar effects of asymmetry are also expected when changing the outer device boundary to a conventional van der Pauw square or Hall bar. Through asymmetric material modification on the nanoscale, one may also produce materials exhibiting nonsaturating, linear positive MR responses present in several recently found materials [55][56][57], but also devices and materials designed with other characteristics.…”

Section: Perspectivementioning

confidence: 99%

Symmetry breaking in magnetoresistive devices

et al. 2022

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Detecting weak magnetic fields is paramount in areas such as scanning magnetometers and manipulation of magnetic nanoparticles, thus rendering it crucial to increase the weak-field sensitivity for developing nextgeneration magnetic sensors. The current approaches for high-sensitivity sensors, such as superconducting quantum interference devices, are complex and expensive. By contrast, magnetoresistive sensors and particularly extraordinary magnetoresistive sensors offer a simple operation at room temperature but, to date, at inferior sensitivity. To overcome these challenges, we induce device symmetry breaking to enhance the weak magnetic field sensitivity in semiconductor-metal hybrid structures exhibiting extraordinary magnetoresistance. Retaining the device mirror symmetry yields symmetric magnetoresistance curves with R(B) = R(−B), which results in inferior detection of weak magnetic fields as [dR/dB] B→0 = 0. Using finite element modeling, we study the change in device behavior as the symmetry is broken by varying the device geometry by spatially varying the constituent material properties or both. We show that symmetry breaking has three important implications: First, breaking the mirror symmetry causes an asymmetric sensor response with R(B) = R(−B), benefiting from a largely enhanced sensitivity to weak magnetic fields and detection of the magnetic field direction. Second, an interplay with the Hall effect causes a large negative magnetoresistance exceeding 79% at B = 1 T and room temperature without magnetic constituents or explicit optimization of this property. Third, the asymmetric geometries can be used as a key ingredient toward designing on-demand magnetoresistive characteristics such as linearity at low magnetic fields, step functions, and magnetic switchlike behavior. These implications pave the way for asymmetric topology optimization of magnetoresistive devices with unparalleled performance.

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Section: Perspectivementioning

confidence: 99%

Symmetry breaking in magnetoresistive devices

et al. 2022

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“…To explain the linear and nonsaturating behavior of the MR AuSn 4 we can think of a linearly dispersing portion of the bandstructure, charge density waves, a complex distribution of paths for the passage of currents or open orbits [7][8][9][10][58][59][60][61][62][63][64][65][66][67][68][69][70][71][72][73]. We do not find portions with a linear dispersion close to the Fermi level in the band structure.…”

Section: Discussionmentioning

confidence: 88%

“…Often, semimetals with potentially topological crossings in the bandstructure also present a huge magnetoresistance (MR) [7][8][9][10]. Among such systems, PtSn 4 and PdSn 4 stand out because of reports connecting topological properties of the band structure with a three orders of magnitude increase in the resistance between zero field and 14 T [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Superconductivity and band structure of layered AuSn$_4$

Herrera¹,

Wu²,

O’Leary³

et al. 2022

Preprint

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“…Our calculations show that the Fermi surface of AuSn 4 contains five large and highly anisotropic sheets (Fig. 10 We can also consider other sources for a nonsaturating MR, such as a linearly dispersing portion of the band structure, charge density waves, open orbits, or disorder [7][8][9][10]10,[75][76][77][78][79][80][81][82][83][84][85][86][87][88][89][90]. We do not find portions with a linear dispersion close to the Fermi level in the band structure.…”

Section: Magnetoresistance Of Ausnmentioning

confidence: 88%

“…Often, semimetals with potentially topological crossings in the band structure also present a huge magnetoresistance (MR) [7][8][9][10]. Among such systems, PtSn 4 and PdSn 4 stand out because of reports connecting topological properties of the band structure with a three orders of magnitude increase in the resistance between zero field and 14 T [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Band structure, superconductivity, and polytypism in AuSn4

Herrera

O’Leary

et al. 2023

Phys. Rev. Materials

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The orthorhombic compound AuSn 4 is compositionally similar to the Dirac node arc semimetal PtSn 4 . AuSn 4 is, contrary to PtSn 4 , superconducting with a critical temperature of T c = 2.35 K. Recent measurements present indications for quasi-two-dimensional superconducting behavior in AuSn 4 . Here we present measurements of the superconducting density of states and the band structure of AuSn 4 through scanning tunneling microscopy and angular resolved photoemission spectroscopy (ARPES). The superconducting gap values in different portions of the Fermi surface are spread around 0 = 0.4 meV, which is close to but somewhat larger than = 1.76k B T c expected from BCS theory. We observe superconducting features in the tunneling conductance at the surface up to temperatures about 20% larger than bulk T c . The band structure calculated with density functional theory follows well the results of ARPES. The crystal structure presents two possible stackings of Sn layers, giving two nearly degenerate polytypes. This makes AuSn 4 a rather unique case with a three-dimensional electronic band structure but properties ressembling those of low-dimensional layered compounds.

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Linear nonsaturating magnetoresistance in the Nowotny chimney ladder compound Ru2Sn3

Cited by 6 publications

References 50 publications

Symmetry breaking in magnetoresistive devices

Symmetry breaking in magnetoresistive devices

Superconductivity and band structure of layered AuSn$_4$

Band structure, superconductivity, and polytypism in AuSn4

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