Linear magnetoresistance in three-dimensional carbon nanostructure with periodic spherical voids

Wang, Leizhi; Yin, Ming; Abdi, Mohammed; Datta, Timir

doi:10.1063/1.4926606

Cited by 5 publications

(5 citation statements)

References 33 publications

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“…Therefore, the behavior is controlled only by the perpendicular magnetic field, confirming the two dimensional nature of electron transport in this heterostructure [7,14,15]. This is different from the orientation insensitive behavior observed in three-dimensional nanostructures [20,32].…”

Section: Weak Localizationsupporting

confidence: 51%

Scatterings and Quantum Effects in (Al,In)N/GaN Heterostructures for High-Power and High-Frequency Electronics

et al. 2018

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Charge transport in the wide band gap (Al,In)N/GaN heterostructures with high carrier density ~2 10 were investigated over a large range of temperature (280 mK < T < 280 K) and magnetic field (0 < B < 20 T). We observe the first evidences of weak localization in the two-dimensional electron gas in this system. From the Shubnikov-de Haas (SdH) oscillations a relatively light effective mass of ~0.23m e is determined. Furthermore the linear dependence with temperature (T < 20 K) of the inelastic scattering rate () is attributed to the phase breaking by electron-electron scattering. Also in the same temperature range the less than unit ratio of quantum lifetime than Hall transport time ⁄ 1 is taken to signify the dominance of small angle scattering. Above 20 K, with increasing temperature scattering changes from acoustic phonon to optical phonon scattering, resulting in a rapid decrease in carrier mobility and increase in sheet resistance. Suppression of such scatterings will lead to higher mobility and a way forward to high power and high frequency electronics. I.

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Section: Weak Localizationsupporting

confidence: 51%

Scatterings and Quantum Effects in (Al,In)N/GaN Heterostructures for High-Power and High-Frequency Electronics

et al. 2018

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“…Now, we discuss the physical mechanisms behind the linear MR behavior in our gold foams. The linear MR phenomenon has been widely studied in several materials, such as Ag 2AEd Se, 18 Ag 2AEd Te, 19 Bi lms, 20 [30][31][32] To the best of our knowledge, two types of theoretical models have been proposed to explain the linear MR phenomena: the classical model and the quantum model. One of the classical linear MR models was suggested by Parish and Littlewood (PL).…”

Section: Discussionmentioning

confidence: 99%

Linear magnetoresistance in gold foams

Luo

Tan

et al. 2017

RSC Adv.

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“…Electrodeposition, as a versatile and low cost fabrication technique, allows the synthesis of complex 3D networks for a wide variety of applications. Specifically, magnetic 3D-IOs fabricated as large scale nanoarchitectures have been found to exhibit interesting microwave absorption [30], magnetic [31], spin wave modes [32] and magneto-transport [33] properties for their potential use as multifunctional devices. Among these, magneto-transport properties like anisotropic magnetoresistance (AMR) and giant magnetoresistance are well-known ef-fects that have been exploited for a wide variety of spintronic applications [34].…”

Section: Introductionmentioning

confidence: 99%

Magneto-transport behavior of disordered three dimensional NixCo1−x inverse opal networks

Soto

Araujo

2023

Rev. Mex. Fís.

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Herein we report on the magneto-transport properties of disordered three dimensional inverse opals (3D-IOs) fabricated by a standard three-probe electrodeposition technique into the interstices of porous membranes made of 150 nm diameter self assembled poly(methyl methacrylate) spheres. This approach has allowed the synthesis of large scale nanocomposites with exact ferromagnetic NixCo1−x alloy compositions and complex interconnected structure. Particularly, the microstructure of Co-rich 3D-IOs is consistent with the hexagonal close packed hcp texture and its corresponding magnetoresistance is explained in terms of the hcp Co magnetocrystalline anisotropy contribution. Conversely, the magnetoresistive behavior of Ni-rich 3D-IO networks is explained in terms of only their magnetostatic field. The control of these features is made possible by the reduced dimensions of necks and walls, in the 40 nm to 60 nm range, of the 3D-IO structure. Despite the disordered morphology of these 3D-IO nanoarchitectures, their microstructural and magneto-transport properties can be fine tuned due to the reduced nanoscale dimensions of the electrical interconnections. These properties have been found to be comparable to those obtained in other 3D networks, making them interesting systems for their potential use for magnetic sensing and spintronic applications.

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Linear magnetoresistance in three-dimensional carbon nanostructure with periodic spherical voids

Cited by 5 publications

References 33 publications

Scatterings and Quantum Effects in (Al,In)N/GaN Heterostructures for High-Power and High-Frequency Electronics

Scatterings and Quantum Effects in (Al,In)N/GaN Heterostructures for High-Power and High-Frequency Electronics

Linear magnetoresistance in gold foams

Magneto-transport behavior of disordered three dimensional NixCo1−x inverse opal networks

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