Abstract:Linear drain current degradation of a field-gate p-channel lateral extended drain MOS (FG-pLEDMOS) transistor for different ac hot-carrier stress conditions has been experimentally investigated in this paper. It is noted that hot-carrier degradation strongly depends on the time of the rising and falling edges of the gate signal pulse. Faster rising and falling edges of the gate pulse will induce more serious hot-carrier degradation. Moreover, the experimental results reveal that the falling edges of the gate p… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.