2023
DOI: 10.1016/j.heliyon.2023.e22867
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Linear and nonlinear optical absorption coefficients in InGaN/GaN quantum wells: Interplay between intense laser field and higher-order anharmonic potentials

Redouane En-nadir,
Mohamed A. Basyooni-M. Kabatas,
Mohammed Tihtih
et al.
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Cited by 2 publications
(1 citation statement)
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“… , a ternary compound, exhibits outstanding traits—encompassing the solar spectrum (0.78 eV to 3.42 eV), high absorption, radiation resistance, thermal stability, and exceptional chemical robustness [ 19 , 20 ]. Moreover, the optical properties of InGaN/GaN systems under different internal and external conditions have been intensively investigated [ 21 , 22 , 23 , 24 , 25 , 26 ]. Optoelectronic devices employing these materials can experience degradation due to the strong integrated electric field (BEF), leading to a decline in overall performance.…”
Section: Introductionmentioning
confidence: 99%
“… , a ternary compound, exhibits outstanding traits—encompassing the solar spectrum (0.78 eV to 3.42 eV), high absorption, radiation resistance, thermal stability, and exceptional chemical robustness [ 19 , 20 ]. Moreover, the optical properties of InGaN/GaN systems under different internal and external conditions have been intensively investigated [ 21 , 22 , 23 , 24 , 25 , 26 ]. Optoelectronic devices employing these materials can experience degradation due to the strong integrated electric field (BEF), leading to a decline in overall performance.…”
Section: Introductionmentioning
confidence: 99%