Linear and nonlinear intraband optical properties of ZnO quantum dots embedded in SiO2 matrix

Abstract

In this work we investigate some optical properties of semiconductor ZnO spherical quantum dot embedded in an amorphous SiO2 dielectric matrix. Using the framework of effective mass approximation, we have studied intraband S-P, and P-D transitions in a singly charged spherical ZnO quantum dot. The optical properties are investigated in terms of the linear and nonlinear photoabsorption coefficient, the change in refractive index, and the third order nonlinear susceptibility and oscillator strengths. Using the parabolic confinement potential of electron in the dot these parameters are studied with the variation of the dot size, and the energy and intensity of incident radiation. The photoionization cross sections are also obtained for the different dot radii from the initial ground state of the dot. It is found that dot size, confinement potential, and incident radiation intensity affects intraband optical properties of the dot significantly

Third harmonic and sum-frequency generation in ZnO quantum dots

“…V b (eV) with ZnO e r m ⁄ HfO 2 2.2 [26] 25 [26] 0.11m e [26] Al 2 O 3 2.5 [27] 9 [28] 0.40m e [28] AlN 3.29 [26] 8.5 [26] 0.32m e [26] SiO 2 4.3 [29] 3.9 [29] 0.50m e [29] ZnO -8.66 [26] 0.24m e [26] The electronic polarization of the quantum dot in an electromagnetic field E(t) can be expressed as,…”

Size Dependent Optical Nonlinearity and Optical Limiting Properties of Water Soluble CdSe Quantum Dots

“…The imaginary part of third-order susceptibility, Im (3) , is related to through the following equation:…”

“…The open -scan scheme was also used to measure Im (3) . The imaginary part of third-order susceptibility, Im (3) , is related to through the following equation:…”

“…It is important to select suitable materials as optical limiting media by determining the magnitude of their nonlinearity. Organic materials characterized by large NLO responses are of major interest owing to their large NLO susceptibilities, fast response time, architectural flexibility, low cost, and ease of fabrication [3,4].…”

Electronic and optical properties of semiconductor nanostructures

“…A theoretical work associated with the intersubband optical properties of ZnO QDs dispersed in SiO 2 matrix has also been reported recently. 125 Though plenty of new insights have been brought by these studies, the influence of the capped matrices on the electronic and optical properties in ZnO colloid QDs is still unknown.…”