Linear and nonlinear intersub-band optical absorption in diffusion-induced AlGaAs/GaAs quantum well at far IR wavelengths

Li, E.H.; Weiss, B.L.; Łaszcz, A.

doi:10.1049/el:19920558

Cited by 5 publications

(3 citation statements)

References 6 publications

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“…We have taken the Fermi level to be 50 meV which has been chosen by Li, Weiss and Laszcz to study the absorption spectra in the DMQWs at zero electric strength. 19 The similar strength of the absorption spectra in the DMQW and SQW suggests that the DMQW can be designed to tune a far infrared region.…”

Section: Fig 2 Ground State Wave Function In An As-grown Sqw As Shomentioning

confidence: 99%

“…18 Compared to the SQW the experimental and theoretical studies are limited in diffusion induced QW. The theoretical nonlinear intersubband optical absorption at different L d without applied electric field by Li et al 19 have shown that it is quite strong compared to the as-grown SQW. The aim of the present work is to study the effect of the electric field on both optical absorption and the change in the dielectric constant using calculated energies and wave functions.…”

Section: Introductionmentioning

confidence: 99%

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Electric field effect on the diffusion modified AlGaAs/GaAs single quantum well

Panda

Fung

et al. 1996

Journal of Applied Physics

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The electron subband energies and wave functions in an interdiffusion-induced Al x Ga 1Ϫx As/ GaAs/Al x Ga 1Ϫx As single quantum well are calculated in the presence of the dc electric field using the finite difference method. The mean lifetimes are obtained from the time-dependent probability of tunneling of the wave packet out of the well by the applied electric field. The effect of the applied electric field on the subband energies in the well is the same as in the as-grown square quantum well when the interdiffusion length is below 20 Å. In the well with higher diffusion length the barrier height reduces so that the wave function tunnels out of the well. The linear and nonlinear intersubband absorption coefficients and the change in the real part of the index of refraction are calculated with the applied electric field at 100 kV/cm and without the field in both the as-grown square well and the diffusion modified well with the interdiffusion length at 20 Å.

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Section: Fig 2 Ground State Wave Function In An As-grown Sqw As Shomentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electric field effect on the diffusion modified AlGaAs/GaAs single quantum well

Panda

Fung

et al. 1996

Journal of Applied Physics

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“…These include nonlinear optical rectification [9] and carrier-induced effects [10]. In addition, intersubband transitions in DFQW has been investigated and demonstrated for wavelength tuning in the 8-12-m range in the case of multiple QW's [11] and in 12-60-m range in the case of single QW's [12]. Postgrowth wavelength tuning of QW infrared detectors by rapid thermal annealing has also been realized [13]- [15].…”

Section: Introductionmentioning

confidence: 99%

The effect of interdiffusion on the intersubband optical properties in a modulation-doped quantum-well structure

1998

IEEE J. Quantum Electron.

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The linear and nonlinear (based on optical field intensity) intersubband absorptions in conduction band, and its change in refractive index in AlGaAs-GaAs interdiffused quantum wells (QW's) are presented. The calculation of the electron energy levels and the envelope wave functions in a modulation doped interdiffused QW's with screening effects are considered. QW interdiffusion shows a wavelength tunability of the intersubband absorption peaks and refractive index dispersions. This shifting of the transition energies is also demonstrated here to be a useful technique for broad-band and multicolor photodetector application. In addition, it can serve to remove noise, such as minor peaks and dispersions, in the optical spectra.

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