Abstract:In this paper, we present a novel Pocket-SGO iTFET design with overlapping gate on source, Schottky contact to drain, and doping-less SiGe pocket. The aim is to achieve steep subthreshold swing (S.S) and high ION current. By optimizing the gate and source overlap, the tunneling efficiency is significantly enhanced, while the ambipolar effect is suppressed. The use of a Schottky contact at the drain, instead of ion implantation drain, reduces leakage current and thermal budget. Additionally, the tunneling regio… Show more
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