Line shape and composition of the In 3d5/2 core-level photoemission for the interface analysis of In-containing III–V semiconductors

Mäkelä, Jarno; Tuominen, M.; Kuzmin, M.; Yasir, Muhammad; Lang, J.; Punkkinen, M.; Laukkanen, P.; Kokko, K.; Schulte, Karina; Osiecki, Jacek; Wallace, Robert M.

doi:10.1016/j.apsusc.2014.12.155

Cited by 5 publications

(2 citation statements)

References 21 publications

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“…A fitting procedure similar to one used for describing surface CLSs for In containing semiconductors was applied with CasaXPS software version 2.3.16 46 . However, due to overlapping of In 3 d 5/2 with Hf 4 p 1/2 , In 3 d 3/2 was used in the fitting because this peak still gives a high intensity.…”

Section: Methodsmentioning

confidence: 99%

Unusual oxidation-induced core-level shifts at the HfO2/InP interface

Mäkelä

Lahti

Tuominen

et al. 2019

Sci Rep

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X-ray photoelectron spectroscopy (XPS) is one of the most used methods in a diverse field of materials science and engineering. The elemental core-level binding energies (BE) and core-level shifts (CLS) are determined and interpreted in the XPS. Oxidation is commonly considered to increase the BE of the core electrons of metal and semiconductor elements (i.e., positive BE shift due to O bonds), because valence electron charge density moves toward electronegative O atoms in the intuitive charge-transfer model. Here we demonstrate that this BE hypothesis is not generally valid by presenting XPS spectra and a consistent model of atomic processes occurring at HfO2/InP interface including negative In CLSs. It is shown theoretically for abrupt HfO2/InP model structures that there is no correlation between the In CLSs and the number of oxygen neighbors. However, the P CLSs can be estimated using the number of close O neighbors. First native oxide model interfaces for III-V semiconductors are introduced. The results obtained from ab initio calculations and synchrotron XPS measurements emphasize the importance of complementary analyses in various academic and industrial investigations where CLSs are at the heart of advancing knowledge.

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Section: Methodsmentioning

confidence: 99%

Unusual oxidation-induced core-level shifts at the HfO2/InP interface

Mäkelä

Lahti

Tuominen

et al. 2019

Sci Rep

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“…We note that this likely represents sub-monolayer coverage. Some In-O or In-S formation is detected due the observed asymmetric In 3d peak shape 24) [Fig. 3(d)], though little change in oxidation occurs throughout the process.…”

Section: (D) In3dmentioning

confidence: 99%

Formation of a ZnO/ZnS interface passivation layer on (NH₄)₂S treated In_0.53Ga_0.47As: Electrical and in-situ X-ray photoelectron spectroscopy characterization

Lucero

Byun

Qin

et al. 2016

Jpn. J. Appl. Phys.

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Atomic layer deposition is used to convert an (NH4)2S cleaned p-In0.53Ga0.47As with diethylzinc (DEZ) and water, resulting in the formation of a ZnO/ZnS interfacial passivation layer (IPL). The process is studied using in-situ X-ray photoelectron spectroscopy. DEZ reacts with sulfur and oxygen present on the surface, chemically reducing arsenic 3+ and gallium 3+ to lower oxidation states. The sulfur concentration remains constant during the deposition process while the oxygen concentration on the surface remains small, confirming that the IPL is composed of both ZnO and ZnS. Measurements of metal–oxide–semiconductor capacitors with HfO2 for the dielectric show that the ZnO/ZnS IPL can nearly eliminate frequency dispersion (<1% per frequency decade) in accumulation and results in small hysteresis (<60 mV) with a D it in the 1011 eV−1 cm−2 range in the midgap. Frequency dispersion is observed in the depletion region and is attributed to minority carrier generation from the ZnO present in the IPL.

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Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

López-Escalante

Gabás

García

et al. 2016

Applied Surface Science

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GaAs/GalnP and GaAs/AlInP interfaces have been studied using photoelectron spectroscopy tools. The combination of depth profile through Ar + sputtering and angle resolved X-ray photoelectron spectroscopy provides reliable information on the evolution of the interface chemistry. Measurement artifacts related to each particular technique can be ruled out on the basis of the results obtained with the other technique. GaAs/GalnP interface spreads out over a shorter length than GaAs/AlInP interface. The former could include the presence of the quaternary GalnAsP in addition to the nominal GaAs and GalnP layers. On the contrary, the GaAs/AlInP interface exhibits a higher degree of compound mixture. Namely, traces of P atoms in a chemical environment different to the usual AllnP coordination were found at the top of the GaAs/AlInP interface, as well as mixed phases like AllnP, GalnAsP or AlGalnAsP, located at the interface.

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Line shape and composition of the In 3d5/2 core-level photoemission for the interface analysis of In-containing III–V semiconductors

Cited by 5 publications

References 21 publications

Unusual oxidation-induced core-level shifts at the HfO2/InP interface

Unusual oxidation-induced core-level shifts at the HfO2/InP interface

Formation of a ZnO/ZnS interface passivation layer on (NH₄)₂S treated In_0.53Ga_0.47As: Electrical and in-situ X-ray photoelectron spectroscopy characterization

Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

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Line shape and composition of the In 3d5/2 core-level photoemission for the interface analysis of In-containing III–V semiconductors

Cited by 5 publications

References 21 publications

Unusual oxidation-induced core-level shifts at the HfO2/InP interface

Unusual oxidation-induced core-level shifts at the HfO2/InP interface

Formation of a ZnO/ZnS interface passivation layer on (NH4)2S treated In0.53Ga0.47As: Electrical and in-situ X-ray photoelectron spectroscopy characterization

Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

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Formation of a ZnO/ZnS interface passivation layer on (NH₄)₂S treated In_0.53Ga_0.47As: Electrical and in-situ X-ray photoelectron spectroscopy characterization