1995
DOI: 10.1007/bf01538249
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LiNbO3 with the damage-resistant impurity indium

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Cited by 52 publications
(23 citation statements)
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“…[93][94][95][96][97][98] The properties of LN doped with optical damage resistant ions were first summarized in a review paper 10 and later in a book by Volk et al 99 Recently, Kong et al 100 reviewed advances in the photorefraction of doped LN, focusing on tetra-, penta-, and hexavalent ions, including doubly-and even triply-doped crystals. They concluded that LN triply doped by Zr, Fe, and Mn shows excellent non-volatile holographic storage properties, and V and Mo single-doped LN have fast response and multi-wavelength storage characteristics.…”
Section: Other Divalent Trivalent and Tetravalent Odr Dopantsmentioning
confidence: 99%
See 1 more Smart Citation
“…[93][94][95][96][97][98] The properties of LN doped with optical damage resistant ions were first summarized in a review paper 10 and later in a book by Volk et al 99 Recently, Kong et al 100 reviewed advances in the photorefraction of doped LN, focusing on tetra-, penta-, and hexavalent ions, including doubly-and even triply-doped crystals. They concluded that LN triply doped by Zr, Fe, and Mn shows excellent non-volatile holographic storage properties, and V and Mo single-doped LN have fast response and multi-wavelength storage characteristics.…”
Section: Other Divalent Trivalent and Tetravalent Odr Dopantsmentioning
confidence: 99%
“…44,45,47 In addition, the increase in the valence of the dopant decreases the threshold. [94][95][96][97][98] In general, the incorporation of ODR ions reduces the amount of antisite Nb Li in the lattice. In nearly stoichiometric LN crystals where the Nb Li concentration is almost zero, the threshold value of the dopant concentration can be lower than 0.2 mol.…”
Section: Other Divalent Trivalent and Tetravalent Odr Dopantsmentioning
confidence: 99%
“…A distinction from the trivalent Sc 3+ might be caused by the less ionic radius of Sc 3+ (Table 2), which facilitates its incorporation into the Li-site. The specificity of In-doping is indirectly supported by the measurements of IR absorption spectra [25,26] which permitted us to suggest the incorporation of In-ions into both cation sites.…”
Section: Resultsmentioning
confidence: 81%
“…Obviously, the reliability of determination of small impurity concentrations demands extremely high accuracy for such experiments. The precise measurements of LiNbO3-In lattice parameters presented here are aimed at planned investigations of In-incorporation into the lattice for further studies in the photorefractive and related properties of LiNbO3-In, started formerly in [25,26].…”
Section: Resultsmentioning
confidence: 99%
“…For example, until now, Fe:LN is one of the most excellent candidate materials for data storage due to its high diffraction effect, high density of data storage, long conserving time and well-considered method of thermal fixation. In general, some beneficial dopants such as Mg, Zn, Sc and In were introduced into Fe:LN to enhance the quality and the optical damage of crystals [2][3][4].…”
Section: Introductionmentioning
confidence: 99%