Limits of the PECVD process for single wall carbon nanotubes growth

Gohier, A.; Minéa, T.; Djouadi, A.; Granier, A.; Dubosc, M.

doi:10.1016/j.cplett.2005.12.105

Cited by 30 publications

(32 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The limits of single walled nanotube growth by plasma techniques have been discussed recently [3]. Here we emphasize another constraint of plasma processing (this time for multi-walled nanotube growth), namely metal contamination of the deposit when driven by the grid biasing.…”

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Influence of Fe/Cr on nitrogen doped carbon nanotube growth

Ewels¹,

Gloter²,

Minéa³

et al. 2008

Eur. Phys. J. Appl. Phys.

View full text Add to dashboard Cite

Abstract. Using electron energy loss spectroscopy in a 100 kV VG scanning transmission electron microscope we study nitrogen doped carbon nanotubes grown via electron cyclotron resonance (ECR) microwave plasma techniques. The process is controlled by direct current (dc) biasing the grid separating the ECR source and the substrate. We show that plasma induced sputtering of the ECR source wall (stainless steel) can lead to significant iron and chromium contamination of growth samples. We identify various Fe, Cr, Ni nitride phases, and propose a growth model based on nitridation-induced metal segregation of steel based FeCrN alloys. Trace Cr doping of nanotube catalysts appears a promising route for introducing large nitrogen concentrations into both single and multi-walled nanotubes and may accelerate nanotube growth rates.

show abstract

Section: Discussionmentioning

confidence: 99%

“…ECR-PECVD is a versatile technique for growing and analyising CNTs, since there are many parameters such as gas feedstock and pressure, growth time, and plasma voltage that can be precisely controlled [1][2][3]. In addition there is the possibility for many in situ spectroscopic techniques allowing compositional analysis of the plasma.…”

Section: Introductionmentioning

confidence: 99%

Influence of Fe/Cr on nitrogen doped carbon nanotube growth

Ewels¹,

Gloter²,

Minéa³

et al. 2008

Eur. Phys. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…From the literature, only the feasibility of the PECVD process to SWNT growth has been demonstrated. 14,15,17 One paper presents a parametric study of SWNT growth but it showed only limited effects. 19 Besides, in that study, SWNTs were not synthesized on predeposited catalyst on flat substrate but from catalyst powder.…”

Section: Introductionmentioning

confidence: 98%

Impact of the etching gas on vertically oriented single wall and few walled carbon nanotubes by plasma enhanced chemical vapor deposition

Gohier

Minéa

Djouadi

et al. 2007

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

show abstract

“…A similar non-linear growth behavior has been observed previously for the production of nanotubes using a cobalt catalyst in the presence of hydrogen and has been attributed to an initial growth of SWCNTs followed by a decrease in the catalytic activity, due to amorphous carbon deposition, of the nanoparticles leading to MWCNT formation. 28 Additionally the SWCNTs are quite fragile and over prolonged time can be preferentially etched away by the plasma. 22 However, MWCNTs are more resistant to plasma etching and so after a prolonged growth exposure only MWCNTs remain.…”

mentioning

confidence: 99%

Transition from single to multi-walled carbon nanotubes grown by inductively coupled plasma enhanced chemical vapor deposition

Bissett

Barlow

Shapter

et al. 2011

Journal of Applied Physics

View full text Add to dashboard Cite

In this work a simple and up-scalable technique for creating arrays of high purity carbon nanotubes via plasma enhanced chemical vapor deposition is demonstrated. Inductively coupled plasma enhanced chemical vapor deposition was used with methane and argon mixtures to grow arrays in a repeatable and controllable way. Changing the growth conditions such as temperature and growth time led to a transition between single and multi-walled carbon nanotubes and was investigated. This transition from single to multi-walled carbon nanotubes is attributed to a decrease in catalytic activity with time due to amorphous carbon deposition combined with a higher susceptibility of single-walled nanotubes to plasma etching. Patterning of these arrays was achieved by physical masking during the iron catalyst deposition process. The low growth pressure of 100 mTorr and lack of reducing gas such as ammonia or hydrogen or alumina supporting layer further show this to be a simple yet versatile procedure. These arrays were then characterized using scanning electron microscopy, Raman spectroscopy and x-ray photoelectron spectroscopy. It was also observed that at high temperature (550 °C) single-walled nanotube growth was preferential while lower temperatures (450 °C) produced mainly multi-walled arrays.

show abstract

Limits of the PECVD process for single wall carbon nanotubes growth

Cited by 30 publications

References 21 publications

Influence of Fe/Cr on nitrogen doped carbon nanotube growth

Influence of Fe/Cr on nitrogen doped carbon nanotube growth

Impact of the etching gas on vertically oriented single wall and few walled carbon nanotubes by plasma enhanced chemical vapor deposition

Transition from single to multi-walled carbon nanotubes grown by inductively coupled plasma enhanced chemical vapor deposition

Contact Info

Product

Resources

About