Limited reaction processing: Growth of Si1−Ge /Si for heterojunction bipolar transistor applications

Fabrication technology of SiGe hetero-structures and their properties

“…As mentioned earlier on the gas-source MBE, during CVD growth of SiGe layers on Si, dramatic acceleration of the growth rate was also observed with the introduction of GeH 4 to the Si source gas, as compared to that of Si layer growth alone [21][22][23][25][26][27]. This is mainly due to the lowering of the hydrogen desorption energy caused by the presence of Ge on the Si surface.…”

Comparison of Trichlorosilane and Trichlorogermane Decomposition on Silicon Surfaces Using FTIR Spectroscopy

“…Dichlorosilane (SiHCI 2 ), silane (SiH 4 ) and germane (GeH4) have been the primary molecular precursors employecT for the CVD of Si Ge films (8)(9). However, both GeHCI 3 and SiHCI 3 are potential candidates for the CVD of'1lx~ex films.…”

A Density Functional Theory Study on the Effect of Ge Alloying on Hydrogen Desorption from SiGe Alloy Surfaces

“…Deposition of SiGe alloys is commonly achieved by chemical vapor deposition (CVD) or gas-source molecular beam epitaxy (GSMBE) with Si and Ge hydrides as gas-phase precursors. − It is well-known that the presence of GeH 4 in a SiGe deposition source gas mixture enhances the growth rate of SiGe alloys compared to epitaxial Si growth, and the effect has been attributed to the enhanced hydrogen desorption rate when Ge is present on the surface during growth. − However, the mechanism by which Ge alloying affects hydrogen desorption chemistry is still unclear. Therefore, attempts to predict SiGe deposition have previously relied on phenomenological surface chemistry models with experimentally determined kinetic parameters interpolated from the pure components. − …”