2019
DOI: 10.1016/j.ifacol.2019.09.176
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Limitations on control performance in the Czochralski crystal growth process using bright ring measurement as a controlled variable

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Cited by 4 publications
(1 citation statement)
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“…Firstly, silicon is melted in the crucible surrounded by annular heaters. Secondly, the seed crystal mounted at the end of pulling rod is pulled upward (Bukhari et al, 2019). Thirdly, a meniscus between the growing crystal and the molten silicon can be formed by the pulling process.…”
Section: Introductionmentioning
confidence: 99%
“…Firstly, silicon is melted in the crucible surrounded by annular heaters. Secondly, the seed crystal mounted at the end of pulling rod is pulled upward (Bukhari et al, 2019). Thirdly, a meniscus between the growing crystal and the molten silicon can be formed by the pulling process.…”
Section: Introductionmentioning
confidence: 99%