The
operational stability of encapsulated halide perovskite solar
cells (HaPSCs) is imperative for their commercialization. Despite
improvements in device stability, we lack insights into the irreversible
degradation of devices under prolonged illumination and heat stress.
Here, we investigated the operational stability of devices (∼1
cm2) made with poly(triaryl amine) (PTAA; power conversion
efficiency PCE ≈ 19.32%) and sputtered NiO
x
(PCE ≈ 15.60%) as a hole-transport layer (HTL) under light (for >1000 h) at 20, 60, and 85 °C to
unravel
the degradation mechanisms. Degradation of the PTAA device was accelerated
by interface deterioration and bulk decomposition initiated by the
formation of voids and PbI2 via iodine migration from defective
regions at the columnar grain boundaries with the release of I2 gas. The NiO
x
device, with its
immunity to iodine and its moisture-resistive properties, had significantly
improved stability with suppression of the HaP bulk degradation by
alleviation of internal defect dynamics. Our results corroborate that
the formation of voids and PbI2 crystallites at columnar
intergrains or at the HTL (ETL) /HaP interface with the release of
I2 gas is the primary cause of device degradation. Capacitance–voltage
analysis showed that the PTAA device develops a much wider defective
interface layer than the NiO
x
device,
driven mainly by the chemical reaction of iodine with the interfacial
layer. Thus, our results reveal that although the cracking of columnar
intergrains and defective spots in the perovskite bulk is the main
origin of device degradation, the nature of the carrier transport
layer also partly contributes to catalyzing bulk and interface degradation.
Thus, the passivation of columnar intergrain defects in the HaP bulk
and lamination of the interface with a chemically inert to iodine
and a moisture-resistive carrier-selective layer is crucial to the
operational stability of HaPSCs.