Considering the toxicity
of lead ions, substituting Pb with nontoxic
elements in halide perovskites, HaPs, has become one of the most significant
challenges associated with these materials. Here, we report on replacing
Pb with Sn and Ge, focusing on an all-inorganic HaP, CsSn
x
Ge1–x
Br3, and using a multihead spray deposition setup for thin-film formation
to overcome the low solubility of the precursors and improve film
coverage. We find that, in this way, we can form CsSn
x
Ge1–x
Br3 films up to high x values as homogeneous solid
solutions; i.e., we obtain a range of compositions with one crystal
structure (rather than clusters of two phases). The cubic structure
of pure CsSnBr3 is maintained up to 77 atom % Ge, with
the lattice spacing decreasing with increasing Ge concentration. The
optical band gap is tunable between 1.8 and 2.5 eV, from pure Sn to
pure Ge HaP. Most importantly, the perovskite structural stability
increases with increasing concentration of Ge, with less oxidation
of both Ge and Sn to the +4 state, which can be ascribed to less octahedral
tilting and stronger bonding. Electrical and electronic transport
measurements show the potential of these materials as Pb-free absorbers
for solar cells, particularly, given their band gap range as the top
cell of a tandem photovoltaic device.