Light trapping properties of surface textured ZnO:Al films deposited at various working pressures

Wang, Ying; Ding, Wanyu; Jiang, Weiwei; Peng, Shou; Wang, Yun; Chai, Weiping

doi:10.1016/j.ceramint.2015.04.140

Cited by 4 publications

(1 citation statement)

References 21 publications

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“…ZnO: Al (AZO) transparent conductive thin films get more and more attentions for their some advantages including low cost,high properties and non-toxicity , especially the high stability in hydrogen plasma during the fabrication process of silicon thin film solar cells by plasma-enhanced chemical vapor deposition [1][2]. Magnetron sputtering is the most widely used technology to prepare AZO thin films, which has characteristics of high deposition rate, low substrates temperature, good film adhesion, easy preparation for a large area etc [3][4][5].The improvement of the electrical and optical properties of AZO films is always a hot area of research.…”

Section: Introductionmentioning

confidence: 99%

Effects of Al2O3 Buffer Layer on the Properties of ZnO: Al Thin Films Deposited on Glass by Sputtering

Wang

2016

MSF

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The ZnO:Al (AZO) films were deposited on glass substrates with Al2O3 buffer layers by RF magnetron sputtering. The obtained films had the hexagonal structure and preferred orientation of (002). Compared with AZO film without buffer layer, the grain size of the film with buffer layer was increased and the conductive property was increased greatly. the grain size of AZO films reached 27.9nm for those with buffer layers. The optical property of AZO films was decreased by the buffer layers. The resistivity of AZO films with Al2O3 buffer layer was about 6.6×10-3 Ω·cm and the average transmittance was over 80% in the range of 450~900nm.

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