Light trapping in thin-film solar cells measured by Raman spectroscopy

Ledinský, Martin; Moulin, Etienne; Bugnon, G.; Ganzerová, Kristína; Vetushka, Aliaksei; Meillaud, Fanny; Fejfar, A.; Ballif, Christophe

doi:10.1063/1.4895931

Cited by 10 publications

(15 citation statements)

References 24 publications

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“…Commonly, patterned/mounded interfaces are observed due to growth instabilities [1] or polycrystallinity, where a complex growth involving intra-and inter-grain dynamics arise. It is well-known that size, texture and spatial distribution of these structures affect several thinfilm properties that are crucial for applications in solar cells [2], spintronic devices [3], contact technology [4] and many others. At a coarse-grained level, the evolution of thin films and other growing interfaces is also a subject of broad interest, since they exhibit scaling invariance and universality [5,6].…”

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confidence: 99%

Temperature effect on (2 + 1) experimental Kardar-Parisi-Zhang growth

Almeida¹,

Ferreira²,

Ribeiro³

2015

EPL

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PACS 68.43.Hn -Structure of assemblies of adsorbates (two-and three-dimensional clustering) PACS 81.15.Aa -Theory and models of film growth PACS 05.40.-a -Fluctuation phenomena, random processes, noise, and Brownian motion Abstract -We report on the effect of substrate temperature (T ) on both local structure and long-wavelength fluctuations of polycrystalline CdTe thin films deposited on Si(001). A strong T -dependent mound evolution is observed and explained in terms of the energy barrier to intergrain diffusion at grain boundaries, as corroborated by Monte Carlo simulations. This leads to transitions from uncorrelated growth to a crossover from random-to-correlated growth and transient anomalous scaling as T increases. Due to these finite-time effects, we were not able to determine the universality class of the system through the critical exponents. Nevertheless, we demonstrate that this can be circumvented by analyzing height, roughness and maximal height distributions, which allow us to prove that CdTe grows asymptotically according to the Kardar-Parisi-Zhang (KPZ) equation in a broad range of T . More important, one finds positive (negative) velocity excess in the growth at low (high) T , indicating that it is possible to control the KPZ non-linearity by adjusting the temperature.

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confidence: 99%

Temperature effect on (2 + 1) experimental Kardar-Parisi-Zhang growth

Almeida¹,

Ferreira²,

Ribeiro³

2015

EPL

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“…This is a consequence of the micro-Raman system’s confocality, which is significantly reduced for objectives with lower numerical aperture, see discussion in Ref. 22. In order to obtain the same c-Si Raman signal intensities over the whole rough c-Si wafer, the 5× objective was used instead.…”

Section: Resultsmentioning

confidence: 99%

Profilometry of thin films on rough substrates by Raman spectroscopy

Ledinský

Paviet‐Salomon

Vetushka

et al. 2016

Sci Rep

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Thin, light-absorbing films attenuate the Raman signal of underlying substrates. In this article, we exploit this phenomenon to develop a contactless thickness profiling method for thin films deposited on rough substrates. We demonstrate this technique by probing profiles of thin amorphous silicon stripes deposited on rough crystalline silicon surfaces, which is a structure exploited in high-efficiency silicon heterojunction solar cells. Our spatially-resolved Raman measurements enable the thickness mapping of amorphous silicon over the whole active area of test solar cells with very high precision; the thickness detection limit is well below 1 nm and the spatial resolution is down to 500 nm, limited only by the optical resolution. We also discuss the wider applicability of this technique for the characterization of thin layers prepared on Raman/photoluminescence-active substrates, as well as its use for single-layer counting in multilayer 2D materials such as graphene, MoS2 and WS2.

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“…However, field effects and morphology or structure changes cannot be detected simultaneously by the above mentioned measurements. Raman spectroscopy, an effective non‐destructive method for studying molecular vibrations in the optoelectronic field, can analyze the charge transfer mechanism, the light‐trapping capability, chemical degradation of photovoltaic system, the morphology change of conjugated polymer, the electromagnetic field between metal and polymers and the structural changes of conjugated polymers near the metallic nanoparticles by the peak position and the relative intensity. The structural sensitivity of Raman spectroscopy makes it become a useful technology to study the plasmonic field between nanostructures and organic optoelectronic materials and the morphology change of the organic optoelectronic materials.…”

Section: Introductionmentioning

confidence: 99%

Plasmonic effects and the morphology changes on the active material P3HT:PCBM used in polymer solar cells using Raman spectroscopy

Yang

Sun

et al. 2016

J Raman Spectroscopy

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There is no consensus yet that the enhancement effects of plasmonic device are predominantly caused by plasmonic effects or induced morphology changes in the optoelectronic`materials. Herein, we present a detailed Raman characterization of a typical organic P3HT:PCBM system comprising silver nanowires (Ag NWs) with different size, which can simultaneously study the plasmonic effects and the morphology changes. The direct comparison of the Raman spectra of non-annealed and annealed samples indicates that the morphology of plasmonic samples has changed before annealing and the morphology of plasmonic samples and reference sample after annealing is not distinguishable. This indicates that the interaction between P3HT and Ag NWs with different size can be explained by plasmonic effects after annealing. Moreover, in-situ Raman spectroscopy is used to study the morphology changes in plasmonic samples with different diameters of Ag NWs during heating process. This method can distinguish the plasmonic effects and morphology changes of plasmonic device.

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Light trapping in thin-film solar cells measured by Raman spectroscopy

Abstract: Articles you may be interested inInfluence of the absorber layer thickness and rod length on the performance of three-dimensional nanorods thin film hydrogenated amorphous silicon solar cells

Cited by 10 publications

References 24 publications

Temperature effect on (2 + 1) experimental Kardar-Parisi-Zhang growth

Temperature effect on (2 + 1) experimental Kardar-Parisi-Zhang growth

Profilometry of thin films on rough substrates by Raman spectroscopy

Plasmonic effects and the morphology changes on the active material P3HT:PCBM used in polymer solar cells using Raman spectroscopy

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