2012
DOI: 10.1063/1.4728173
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Light-soaking issue in polymer solar cells: Photoinduced energy level alignment at the sol-gel processed metal oxide and indium tin oxide interface

Abstract: We report the origin of the strong UV-irradiation dependence, generally known as a “light-soaking” process, in inverted polymer solar cells (I-PSCs) using the interface of an sol-gel processed titanium sub-oxide (TiOx) and indium tin oxide (ITO) cathode. When I-PSCs incorporating TiOx as an electron-selecting layer were fabricated, the as-prepared devices exhibited an anomalous J-V curve with a kink shape, resulting in an extremely low efficiency. However, the kink shape disappeared after white light irradiati… Show more

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Cited by 115 publications
(110 citation statements)
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“…Therefore, the interface charge transport may become the main factor that influences cell performance. In inverted solar cells that contain sol-gel titanium oxide as an electron collection layer, a light soaking effect that cell performance improves gradually with an increase in light irradiation time has often been observed [10][11][12][13][14][15][16] . Although this mysterious phenomenon is now well known, there is not necessarily satisfactory explanation for the mechanism.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, the interface charge transport may become the main factor that influences cell performance. In inverted solar cells that contain sol-gel titanium oxide as an electron collection layer, a light soaking effect that cell performance improves gradually with an increase in light irradiation time has often been observed [10][11][12][13][14][15][16] . Although this mysterious phenomenon is now well known, there is not necessarily satisfactory explanation for the mechanism.…”
Section: Introductionmentioning
confidence: 99%
“…[3][4][5][6][7] One of the fundamental issues is the light-soaking phenomenon with respect to UV-light irradiation, which has been commonly observed in IOSCs with electron-collecting layers such as TiO x . 2,[8][9][10][11][12][13][14][15] Although high-temperature annealing treatments on the TiO x layer can prevent the phenomenon, such treatments are undesirable for low-temperature device fabrication using flexible plastic substrates. 15 Additionally, long-term UV-light irradiation on IOSCs can cause device degradation.…”
mentioning
confidence: 99%
“…[32][33][34][35][36][37] Some of these trap states, close to the ITO/ZnO, could be filled up during the light-soaking illumination. 19,22 On the other hand, the trap states, close to the ZnO/P3HT:PCBM, could change the induced interfacial dipoles. 23,24 Presented data do not consider which interface (ITO/ZnO or ZnO/P3HT:PCBM) plays the key role in the lightsoaking effect but highlight the need for taking into account the LS effect in the analysis.…”
Section: Changes In Magnitude Of the Light-soaking Effect During The mentioning
confidence: 99%
“…In the first case, the filling of trap states upon illumination decreases the work function of the ETL, which reduces the potential barrier and thus improves the extraction of electron through the ITO/metal-oxide interface. 19,22 In the second case, the key role in the light-soaking effect plays the interfacial dipole between the metal-oxide/organic interface. [23][24][25] Sometimes the devices should be stimulated under solar simulator for at least few minutes (∼10 min) at the 1000-W∕m 2 illumination intensity, for saturation of their photovoltaic properties.…”
Section: Introductionmentioning
confidence: 99%