Light responsive amorphous organic field-effect transistor based on spiro-linked compound

Saragi, Tobat P. I.; Pudzich, Robert; Fuhrmann‐Lieker, Thomas; Salbeck, Josef

doi:10.1016/j.optmat.2006.01.013

Cited by 19 publications

(20 citation statements)

References 15 publications

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“…It is also interesting for light triggered amplification and highly sensitive image sensors. Many research groups have reported the phototransistor based on organic thin films, but the charge transport was dominated by holes, leading to a unipolar organic phototransistor [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Ambipolar organic phototransistor

et al. 2007

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Section: Introductionmentioning

confidence: 99%

Ambipolar organic phototransistor

et al. 2007

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“…Integrating nonplanar "spiro" compounds 1-22 into organic electronics shows promise for improving properties which are important for the efficient operation of devices such as organic light-emitting diodes (OLEDs), [5][6][7][8][9] organic phototransistors (OPTs), 10,11 organic solid-state lasers (OSSLs), [12][13][14][15] as well as organic thin film transistors (OTFTs). 16,17 Such properties include morphological, thermal and chemical stability, superior isolation of emitting centers and hence enhanced photo/electroluminescent quantum efficiencies, better solubility and improved solution processability.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of poly(spirosilabifluorene) copolymers and their improved stability in blue emitting polymer LEDs over non-spiro analogs

et al. 2015

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We report herein a unique deep blue emitting copolymer, poly(3,6-dimethoxy-9.9'-dihexylsilafluoreneco-3.6-dimethoxy-2',3',6',7'-tetrahexyloxy-9,9-spiro-9-silabifluorene) (PHSSF-co-PDHSF), which exhibits brilliant solid state blue luminescence, high quantum efficiency, excellent solubility and thermal stability. We have found that using PHSSF-co-PDHSF copolymers with large volume fractions of spirosilabifluorene as the emissive layer in OLEDs correlates to more stable EL intensity and have improved lifetimes over non-spiro poly(silafluorene) devices. The HSSF monomer is prepared via a two-part procedure, with each part resulting in one of two biphenyl segments which combines in a final cyclization step involving tetrachlorosilane. One segment possesses two bromide groups necessary for the polymerization. We utilized an efficient nickel catalyzed polymerization based on diarylmagnesate monomers to create PHSSF-co-PDHSF in good yield with number average molecular weights exceeding 50 kg mol −1 with a PDI = 1.8.The polymerization was complete in less than 30 min. For PHSSF-co-PDHSF OLED devices, the maximum irradiance of the device was 40 W m −2 at a current density of 60 mA cm −2 and EL maximum centered at 410 nm. The maximum device external quantum efficiency was 2.9% when operating at 38 mA cm −2 . To measure OLED stability, we monitored normalized EL intensity for both PHSSF-co-PDHSF and PDHSF devices. Over the course of 10 h, the EL intensity of the PDHSF device drops 20% more than the PHSSF-co-PDHSF device when operating at 6 mA cm −2

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“…Salbeck and co-workers also reported the OPTs using various spiro compounds and donor/acceptor dyad as an active layer. [10][11][12][13] More recently, our group reported highly sensitive OPTs based on soluble star-shaped organic -conjugated molecules with high quantum yields, 14 in which the photosensitivity was 2500ϳ 4300 A / W with low optical powers at zero gate bias.…”

Section: Introductionmentioning

confidence: 99%

“…6,[9][10][11][12][13][14] With enhanced charge carrier mobility, the photosensitivity of OPTs is increased. However, the effects of light power and source-drain and gate biases on photosensitivity are less simply surmised, because photosensitivity is related to the number of photogenerated carriers, the barrier height for injection/extraction of carriers, photocurrent conversion efficiency, and carrier mobility.…”

Section: Introductionmentioning

confidence: 99%

Gate-field dependent photosensitivity of soluble 1,2,4,5-tetra(5′-hexyl-[2,2′]terthiophenyl-5-vinyl)-benzene based organic thin film transistors

Cho

Kım

Kim

et al. 2010

Journal of Applied Physics

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The photoresponsive current-voltage characteristics of organic thin film transistors (OTFTs) have been studied as a function of gate-bias. For the active layer of the OTFTs, soluble 1,2,4,5-tetra(5′-hexyl-[2,2′]terthiophenyl-5-vinyl)-benzene materials have been used, and the thickness of the active layers varied. The photosensitivity of the OTFTs was controlled through both gate-bias (Vg) and incident light power. With increasing incident light power, the photosensitivity decreased during the source-drain current actively varied with Vg [i.e., at on-state with accumulated hole channel (Vg<Vonset)], while it increased for Vg≥Vonset (at off-state without accumulated hole channel). These variations are caused by two kinds of photocurrent mechanisms: one based on the photovoltaic effect for Vg<Vonset and another based on the photoconductive effect for Vg≥Vonset. The maximum photosensitivity of OTFTs was found to be approximately 40 times higher in the on-state than in the off-state due to the contribution of photovoltaic effect in the on-state.

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Light responsive amorphous organic field-effect transistor based on spiro-linked compound

Cited by 19 publications

References 15 publications

Ambipolar organic phototransistor

Ambipolar organic phototransistor

Synthesis of poly(spirosilabifluorene) copolymers and their improved stability in blue emitting polymer LEDs over non-spiro analogs

Gate-field dependent photosensitivity of soluble 1,2,4,5-tetra(5′-hexyl-[2,2′]terthiophenyl-5-vinyl)-benzene based organic thin film transistors

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