2020
DOI: 10.3390/app10144730
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Light Load Efficient Silicon Power Converters Based on Wide Bandgap Circuit Extensions

Abstract: A power electronics converter is generally designed for a specific load condition. However, depending on the applications and its mission profiles, the operating load conditions can be distinctly lower than the specified ones (PV cell under shading conditions, etc.). During this light load condition, the efficiency diminishes considerably, especially if Si–IGBT devices are considered within the power circuit. This study explains a light-load circuit extension based on wide-bandgap (WBG, silicon carbide… Show more

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Cited by 2 publications
(1 citation statement)
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“…WBG transistors are expected to be applied to a wide range of power conversion applications, which nowadays are dominated by the traditional silicon (Si)-based power devices. In [7] the authors present a comparative analysis using a high-power converter with and without a light-load upgrade circuit and the paper includes the calculation of total (switching and conduction) losses of a high-power Si-IGBT converter and a low power SiC-MOSFET converter. In addition, the utilization of GaN transistors in such applications is considered.…”
Section: Part 2: Power Convertersmentioning
confidence: 99%
“…WBG transistors are expected to be applied to a wide range of power conversion applications, which nowadays are dominated by the traditional silicon (Si)-based power devices. In [7] the authors present a comparative analysis using a high-power converter with and without a light-load upgrade circuit and the paper includes the calculation of total (switching and conduction) losses of a high-power Si-IGBT converter and a low power SiC-MOSFET converter. In addition, the utilization of GaN transistors in such applications is considered.…”
Section: Part 2: Power Convertersmentioning
confidence: 99%