Light-induced monolayer modification of chlorinated silicon (111) surfaces studied with a scanning tunneling microscope

Shudo, K.; Komori, Fumio; Hattori, Ken; Murata, Y.

doi:10.1016/0039-6028(94)00517-6

Cited by 20 publications

(12 citation statements)

References 12 publications

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“…The STM has also been used to examine the etching of the chlorinated Si͑111͒-͑7ϫ7͒ surface before and after irradiation. 3 Knowledge of the adsorption and dissociation behaviors of O 2 on the Pt͑111͒ surface is a necessary basis for the understanding of simple oxidation reactions on this catalytic surface and may serve as a general model for catalytic reactions in other systems. As a result, this system has been studied extensively in the past.…”

mentioning

confidence: 99%

Atomistic studies of O2 dissociation on Pt(111) induced by photons, electrons, and by heating

Stipe

Rezaei

1997

The Journal of Chemical Physics

140

116

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The adsorption and subsequent dissociation of O2 on Pt(111) was studied by variable temperature scanning tunneling microscopy in the temperature range of 40 to 215 K. Tight clustering of bridge site molecules is observed on terraces between 40 and 70 K, indicating a highly mobile precursor to chemisorption. Coexistence of bridge and fcc hollow site molecules in fractal-shaped islands is observed after dosing between 70 and 95 K. Dissociation of these species was induced by uv radiation, inelastic tunneling electrons, and heating. In all three cases, two O atoms are found within two lattice constants of the original molecule and one to three lattice constants apart.

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mentioning

confidence: 99%

Atomistic studies of O2 dissociation on Pt(111) induced by photons, electrons, and by heating

Stipe

Rezaei

1997

The Journal of Chemical Physics

140

116

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“…In the study of surface reactions, static phases can be atomically resolved, using chiefly STM and its variations. [3][4][5][6][7][8][11][12][13][14] In STM images, however, the restatom is hard to see. Further, phenomena are mostly observed on the cooled surface after desorption and are seldom clarified on a quantitative basis.…”

Section: Resultsmentioning

confidence: 99%

Reactivity of restatoms and adatoms in Cl adsorption at a Si(111)-7×7 surface

Shudo

Washio

Tanaka

2003

The Journal of Chemical Physics

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We observed the adsorption process of chlorine at a Si(111)-7×7 surface by means of surface differential reflectance spectroscopy, which can evaluate the surface densities of both the Cl-terminated dangling bonds at the Si adatoms and the broken back bonds beneath. The total coverage of chlorine was obtained with thermal desorption spectroscopy. The adsorption process on the dangling bonds at the restatoms was concluded to proceed as follows: Chlorine has no preference between the native dangling bond of the adatom and that of the restatom for being adsorbed at the initial phase. After all the native dangling bonds have substantially been terminated, back bond breakage occurs. There are two stages in the breaking process. Until 65% of the breakable back bonds are cut, the chlorine atom tends to break a further back bond rather than to terminate the dangling bond at the restatom that emerges after the back bond breakage. On a more Cl-dense surface, this tendency is reversed; the Cl atoms to be adsorbed will break a further back bond at only 23% probability, and will terminate the dangling bonds that have emerged on the restatoms at 77% probability. These results indicate that the emerging dangling bonds should be taken into consideration, as well as the native dangling bonds at the restatom, in the overall mechanism of the surface reaction.

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“…Hence, etching pathways of the halogenated silicon surfaces have been investigated by analyzing desorbed species during thermal treatment and photon irradiation. [1][2][3][4][5][6][7] In the thermally activated etching of chlorine-͑Cl-͒ adsorbed Si͑111͒ surface, the dominant component of the desorption is SiCl 2 molecule. Monochlorides on the surface recombine with other Cl atoms and are subsequently desorbed as volatile dichlorides, which is attributed to weaker bonds of dichlorides to substrate ͑2.8 eV͒ than monochlorides ͑4.2 eV͒.…”

Section: Introductionmentioning

confidence: 99%

Photon-stimulated desorption from chlorinated Si(111): Etching of SiCl by picosecond-pulsed laser irradiation

et al. 2006

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Cl etching of silicon surfaces assisted with short pulsed laser irradiation is analyzed to find out chloride removal processes without using thermal reaction. When a Cl-saturated Si͑111͒ surface was irradiated by a picosecond pulsed laser at 400 nm, desorptions of SiCl and SiCl 2 molecules were observed with a quadrupole mass spectrometer with a pulse-counting system. The presence of the SiCl desorption shows previously unfound etching process without thermally induced recombinative reaction. Time-of-flight and signal-ratio of the SiCl and SiCl 2 molecules indicated that they were assigned to products from restatom monochlorides and adatom polychlorides, respectively. High desorption rates of the chlorides which depend on laser fluence nonlinearly suggest that multiple excitation by substrate hot carriers is essential to the etching.

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Light-induced monolayer modification of chlorinated silicon (111) surfaces studied with a scanning tunneling microscope

Cited by 20 publications

References 12 publications

Atomistic studies of O2 dissociation on Pt(111) induced by photons, electrons, and by heating

Atomistic studies of O2 dissociation on Pt(111) induced by photons, electrons, and by heating

Reactivity of restatoms and adatoms in Cl adsorption at a Si(111)-7×7 surface

Photon-stimulated desorption from chlorinated Si(111): Etching of SiCl by picosecond-pulsed laser irradiation

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