Light-induced junction modification in (Cd, Zn)S/CuInSe<sub>2</sub>solar cells

Potter, R. R.; Sites, James R.

doi:10.1109/t-ed.1984.21571

Cited by 34 publications

(7 citation statements)

References 10 publications

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“…One property frequently observed in thin-film PVs is the “crossover” behavior . This is a phenomenon that the J / V curve in the dark crosses those under illumination.…”

Section: Electronic Chracterizationsupporting

confidence: 87%

“…One property frequently observed in thin-film PVs is the "crossover" behavior. 28 This is a phenomenon that the J/V curve in the dark crosses those under illumination. It is clear that J/V curves with different J photo should not cross: a common set of (J, V) does not satisfy eq 1 with different J photo s simultaneously.…”

Section: Crossover Phenomenonmentioning

confidence: 99%

“…In the thin-film PV research, the origin is attributed to the interface trap states, which are photoactivated and provide extra charged layer. 28 This layer counteracts part of the built-in potential resulting in the reduction of the apparent bias voltage. Because eq 1 is an implicit function of J, the J/V curves with two different J photo s are not simple lateral translation of each other.…”

Section: Crossover Phenomenonmentioning

confidence: 99%

“…Thus, an additional mechanism not taken into consideration in eq must be present. In the thin-film PV research, the origin is attributed to the interface trap states, which are photoactivated and provide extra charged layer . This layer counteracts part of the built-in potential resulting in the reduction of the apparent bias voltage.…”

Section: Electronic Chracterizationmentioning

confidence: 99%

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Lead Halide Perovskite Photovoltaic as a Model p–i–n Diode

et al. 2016

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The lead halide perovskite photovoltaic cells, especially the iodide compound CH3NH3PbI3 family, exhibited enormous progress in the energy conversion efficiency in the past few years. Although the first attempt to use the perovskite was as a sensitizer in a dye-sensitized solar cell, it has been recognized at the early stage of the development that the working of the perovskite photovoltaics is akin to that of the inorganic thin film solar cells. In fact, theoretically perovskite is always treated as an ordinary direct band gap semiconductor and hence the perovskite photovoltaics as a p-i-n diode. Despite this recognition, research effort along this line of thought is still in pieces and incomplete. Different measurements have been applied to different types of devices (different not only in the materials but also in the cell structures), making it difficult to have a coherent picture. To make the situation worse, the perovskite photovoltaics have been plagued by the irreproducible optoelectronic properties, most notably the sweep direction dependent current-voltage relationship, the hysteresis problem. Under such circumstances, it is naturally very difficult to analyze the data. Therefore, we set out to make hysteresis-free samples and apply time-tested models and numerical tools developed in the field of inorganic semiconductors. A series of electrical measurements have been performed on one type of CH3NH3PbI3 photovoltaic cells, in which a special attention was paid to ensure that their electronic reproducibility was better than the fitting error in the numerical analysis. The data can be quantitatively explained in terms of the established models of inorganic semiconductors: current/voltage relationship can be very well described by a two-diode model, while impedance spectroscopy revealed the presence of a thick intrinsic layer with the help of a numerical solver, SCAPS, developed for thin film solar cell analysis. These results point to that CH3NH3PbI3 is an ideal intrinsic semiconductor, which happens to be very robust against accidental doping, and that the perovskite photovoltaic cell is in fact a model p-i-n diode. The analytical methods and diagnostic tools available in the inorganic semiconductor PV cells are useful and should be fully exploited in the effort of improving the efficiency. One outstanding question is why the perovskite stays intrinsic. Considering the defects and impurities that must abound in the perovskite layers formed by the spin-coating process, for example, there must be physicochemical mechanism keeping it from being doped. This may be related to the special band structure making up the band gap in this ionic solid. Understanding the mechanism may open a door for the wider utility of this class of solid.

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“…One property frequently observed in thin-film PVs is the “crossover” behavior . This is a phenomenon that the J / V curve in the dark crosses those under illumination.…”

Section: Electronic Chracterizationsupporting

confidence: 87%

Section: Crossover Phenomenonmentioning

confidence: 99%

Section: Crossover Phenomenonmentioning

confidence: 99%

Section: Electronic Chracterizationmentioning

confidence: 99%

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Lead Halide Perovskite Photovoltaic as a Model p–i–n Diode

et al. 2016

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“…Reference was made in this book to the crossover of experimental dark and light j − V characteristics for a Cu 2 S-CdS solid-state heterojunction solar cell but its origin was not explored. A light-induced junction modification has also been reported for the (Cd, Zn)S-CuInSe 2 solid-state system [155,156]. The cross-over effect appears to have been treated in even lesser depth in some classical textbooks on semiconductor devices [104,157].…”

Section: Second Computation and Modeling Of The Open-circuit Voltage ...mentioning

confidence: 96%

Fundamentals of Semiconductor Electrochemistry and Photoelectrochemistry

Rajeshwar

2002

Encyclopedia of Electrochemistry

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The sections in this article are Introduction and Scope Electron Energy Levels in Semiconductors and Energy Band Model The Semiconductor–Electrolyte Interface at Equilibrium The Equilibration Process The Depletion Layer Mapping of the Semiconductor Band‐edge Positions Relative to Solution Redox Levels Surface States and Other Complications Charge Transfer Processes in the Dark Current‐potential Behavior Dark Processes Mediated by Surface States or by Space Charge Layer Recombination Rate‐limiting Steps in Charge Transfer Processes in the Dark Light Absorption by the Semiconductor Electrode and Carrier Collection Light Absorption and Carrier Generation Carrier Collection Photocurrent‐potential Behavior Dynamics of Photoinduced Charge Transfer Hot Carrier Transfer Multielectron Photoprocesses Nanocrystalline Semiconductor Films and Size Quantization Introductory Remarks The Nanocrystalline Film–Electrolyte Interface and Charge Storage Behavior in the Dark Photoexcitation and Carrier Collection: Steady State Behavior Photoexcitation and Carrier Collection: Dynamic Behavior Size Quantization Chemically Modified Semiconductor–Electrolyte Interfaces Single Crystals Nanocrystalline Semiconductor Films and Composites Types of Photoelectrochemical Devices Conclusion Acknowledgments

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Chalcogenides: Solid‐State Chemistry

Rajeshwar

Macaluso

2020

Encyclopedia of Inorganic and Bioinorganic Chemistry

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Binary, ternary, and quaternary metal chalcogenides are considered in this article. The compound stoichiometries in each family are first analyzed with the aid of compositional diagrams. Then, the various synthetic approaches are reviewed followed by a discussion of the structural attributes. The advances with computational study of electronic band structures are next reviewed followed by a discussion of the optical and optoelectronic properties. Mixed compounds, doping, and solid solutions are next discussed followed with a summary and perspectives for future study. While metal chalcogenides are important from a wide array of practical applications (energy conversion/storage, microelectronics, lubrication, etc.), the approach adopted in this review article focuses on material properties that enable these applications.

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Light-induced junction modification in (Cd, Zn)S/CuInSe₂solar cells

Cited by 34 publications

References 10 publications

Lead Halide Perovskite Photovoltaic as a Model p–i–n Diode

Lead Halide Perovskite Photovoltaic as a Model p–i–n Diode

Fundamentals of Semiconductor Electrochemistry and Photoelectrochemistry

Chalcogenides: Solid‐State Chemistry

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Light-induced junction modification in (Cd, Zn)S/CuInSe2solar cells

Cited by 34 publications

References 10 publications

Lead Halide Perovskite Photovoltaic as a Model p–i–n Diode

Lead Halide Perovskite Photovoltaic as a Model p–i–n Diode

Fundamentals of Semiconductor Electrochemistry and Photoelectrochemistry

Chalcogenides: Solid‐State Chemistry

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Light-induced junction modification in (Cd, Zn)S/CuInSe₂solar cells