2016
DOI: 10.1007/s10854-016-4567-5
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Light induced charge transport property analysis of nanostructured ZnS based Schottky diode

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Cited by 88 publications
(350 citation statements)
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“…71,72 As the value of the ideality factor of our synthesized complex-based device is more or less near the ideal value (∼1), it depicts the fewer number of recombination of interfacial charge carriers and generation of better homogeneity at the barrier of Schottky junctions. 67 From this, it may be concluded that our synthesized complex-based SBD possesses less carrier recombination at the junction, that is, better barrier homogeneity.…”
Section: ■ Introductionmentioning
confidence: 74%
“…71,72 As the value of the ideality factor of our synthesized complex-based device is more or less near the ideal value (∼1), it depicts the fewer number of recombination of interfacial charge carriers and generation of better homogeneity at the barrier of Schottky junctions. 67 From this, it may be concluded that our synthesized complex-based SBD possesses less carrier recombination at the junction, that is, better barrier homogeneity.…”
Section: ■ Introductionmentioning
confidence: 74%
“…The interesting observation is that under irradiation condition, the value of η of our fabricated SDs significantly approaches more ideal (closer to 1). This depicts the recombination of a fewer number of interfacial charge carriers and generation of better homogeneity at the barrier of Schottky junctions [8].…”
Section: Fig 2(a) J−v Characteristics Curve For Ito/synthesized Znsementioning
confidence: 99%
“…The optical band gap for each of the films has been estimated from UV-vis spectrum using Tauc's equation (eqn. 1) [8].…”
Section: Optical Analysismentioning
confidence: 99%
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