2003
DOI: 10.1023/b:rupj.0000028150.60370.66
|View full text |Cite
|
Sign up to set email alerts
|

Light-Induced Absorption in Bismuth Titanium Oxide Crystals Illuminated with Narrow-Band Light

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

1
5
0

Year Published

2005
2005
2021
2021

Publication Types

Select...
5

Relationship

2
3

Authors

Journals

citations
Cited by 6 publications
(6 citation statements)
references
References 4 publications
1
5
0
Order By: Relevance
“…The absorption coefécient of BTO crystals in the red region also considerably increases after their irradiation by 525-nm semiconductor light-emitting diodes [18]. In accordance with the model of photoinduced impurity absorption presented above, this is caused by the population of traps with average ionisation energies E 1 1X60 eV and E 2 2X57 eV by photoexcited electrons and should increase both the speed of response and the eféciency of dynamic holography devices based on photosensitive BTO crystals.…”
Section: Discussion Of the Resultssupporting
confidence: 71%
See 2 more Smart Citations
“…The absorption coefécient of BTO crystals in the red region also considerably increases after their irradiation by 525-nm semiconductor light-emitting diodes [18]. In accordance with the model of photoinduced impurity absorption presented above, this is caused by the population of traps with average ionisation energies E 1 1X60 eV and E 2 2X57 eV by photoexcited electrons and should increase both the speed of response and the eféciency of dynamic holography devices based on photosensitive BTO crystals.…”
Section: Discussion Of the Resultssupporting
confidence: 71%
“…It is assumed in [13,17,19] that traps are shallow and their depletion due to thermal excitation of electrons to the conduction band provides the relaxation of induced variations in absorption in the dark. However, the authors of [18] have shown that the localisation depth of the trap energy levels in the energy gap of a Bi 12 TiO 20 : Ca crystal exceeds 1.43 eV from the conduction- band bottom. The corresponding value for a pure BTO crystal can be estimated from the data presented in [20] as 1.17 eV.…”
Section: Theoretical Model Of Photoinduced Impurity Absorptionmentioning
confidence: 99%
See 1 more Smart Citation
“…A slow prolonged component of light-induced absorption is observed both for TM 0 and TM 7 modes. However, this component causes the decrease in light absorption for TM 0 mode and growth for TM 7 mode at t4200 s: It is assumed [9,10] that the defect donor and trap centers are responsible for light-induced absorption in sillenite crystals. The observed distinctions indicate that these centers have an inhomogeneous distribution on the depth of epitaxial structure BTO:Cu/BSO.…”
Section: Waveguide Properties Of Epitaxial Structuresmentioning
confidence: 99%
“…Also, results of applying a model of the photorefractive effect with shallow and deep traps [65][66][67][68][69][70][71] for interpreting experimental results from a study of two-wave mixing were given. This model was used [72] with light-induced absorption incorporated additionally into the examination.…”
Section: Role Of the Piezoelectric Effect In The Formation And Readinmentioning
confidence: 99%