Light Extraction from GaN-Microcavity

Abstract

t will be demonstrated that light extraction of GaNcan be more efficient with the use of flat and dome epoxy. Theoretically the angle, wavelength, and thickness depend on the photoluminescence emission of the luminescent film of transparent substrate. This was studiedusing theFresnel type transmittance calculations for s- (TE) and p- (TM) polarized emission. Experimentally we have demonstrated a GaN/sapphire microcavity exhibited in the 1.3-1.6 fold enhancement in light extraction efficiency by using flat and dome epoxy as external medium compared with air external medium. In addition, simulation results shows that using (HfO2(), Epoxy (),MgF2 (), Air ()) improve the light extraction by increasingthe critical angle and diffracting the internal light with a large solid angle into the light escape cone.