Light Extraction Enhancement of InGaN Based Micro Light-Emitting Diodes with Concave-Convex Circular Composite Structure Sidewall

Tan, Lijun; Zhou, Quanbin; Hu, Wenlong; Wang, Hong; Yao, Ruohe

doi:10.3390/app9173458

Cited by 5 publications

(4 citation statements)

References 43 publications

(49 reference statements)

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“…For example, the sidewall surface of circular blue lLEDs (chip size: 50 lm) was patterned with concave-convex circular composite structures. 104,105 A circular pattern radius of 2 lm was found to be optimal, leading to the highest LEE. This improvement in the LEE was associated with a reduction in the TIR at the sidewall caused by the concave-convex circular composite structure.…”

Section: Efficienct Light Extraction From Lledsmentioning

confidence: 95%

Recent advances in micro-pixel light emitting diode technology

Park,

Pristovsek,

Amano

et al. 2024

Applied Physics Reviews

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Display technology has developed rapidly in recent years, with III–V system-based micro-light-emitting diodes (μLEDs) attracting attention as a means to overcome the physical limitations of current display systems related to their lifetime, brightness, contrast ratio, response time, and pixel size. However, for μLED displays to be successfully commercialized, their technical shortcomings need to be addressed. This review comprehensively discusses important issues associated with μLEDs, including the use of the ABC model for interpreting their behavior, size-dependent degradation mechanisms, methods for improving their efficiency, novel epitaxial structures, the development of red μLEDs, advanced transfer techniques for production, and the detection and repair of defects. Finally, industrial efforts to commercialize μLED displays are summarized. This review thus provides important insights into the potential realization of next-generation display systems based on μLEDs.

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Section: Efficienct Light Extraction From Lledsmentioning

confidence: 95%

Recent advances in micro-pixel light emitting diode technology

Park,

Pristovsek,

Amano

et al. 2024

Applied Physics Reviews

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“…Quantum dots (QDs) have been widely used in photoelectric display, light-emitting diodes, photocatalysis, and other fields [1][2]. However, there are still limitations in stability of color conversion devices prepared by pure QDs [3][4][5]. Therefore, the preparation of color conversion layer by using ordered mesoporous composites (OMMs) combined with quantum dots has become a hot topic in recent years [6].…”

Section: Introductionmentioning

confidence: 99%

Composite of ordered mesoporous materials and quantum dots for light extraction of μLEDs

Zhao,

Chen,

et al. 2023

Third International Computing Imaging Conference (CITA 2023)

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Quantum Dots (QD) have attracted broad attention owing to their unique advantages in micro-scale light-emitting diodes (μLED). However, the color converted μLEDs prepared by pure QDs will have low stability and luminous efficiency. The combination of QD and Ordered Mesoporous Materials (OMMs) can effectively improve the luminescent performance of μLED. This paper, from the properties via simulation and experiment, studies the influence of QD/OMMs composites on the properties. The luminescence properties of QD/OMMs composites were studied by instrument characterization. The μLED model with OMMs was established based on Finite Difference Time Domain (FDTD) method, and the Light Extraction Efficiency (LEE) of μLED in the three central wavelength ranges was explored respectively. The simulation results show that the LEE of μLED doped with SBA reaches 89.5%, which is 40% higher than that doped with MCM. More importantly, the μLED doped with OMMs designed in this paper can achieve a high luminous efficiency of 79.2% in the red light range and 83.2% in the green light range. The QD/OMMs composites designed are applied to μLED, and the high LEE is realized in three same central wavelength ranges, which provides a new direction and strategy for the preparation of GaN-based μLED devices

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“…However, they often suffered from low efficiency [14,15]. There has also been much work to improve the light extraction efficiency (LEE) of the devices and display panels [16][17][18] in order to achieve better external quantum efficiency (EQE). Park et al, from Korea University, reported using indium tin oxide (ITO) as the electrode to form a transparent device, yet it still led to a low current density [19].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Electrical Properties and Reliability of GaN-Based Micro-LEDs

et al. 2020

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In this paper, we report high-performance Micro-LEDs on sapphire substrates, with pixel size scaling to 20 µm and an ultra-high current density of 9902 A/cm2. The forward voltages (VF) of the devices ranged from 2.32 V to 2.39 V under an injection current density of 10 A/cm2. The size and structure-dependent effects were subsequently investigated to optimize the device design. The reliability of Micro-LED devices was evaluated under long-aging, high-temperature, and high-humidity conditions. It was found that Micro-LED devices can maintain comparable performance with an emission wavelength of about 445 nm and a full width at half maximum (FWHM) of 22 nm under extreme environments. Following this, specific analysis with four detailed factors of forward voltage, forward current, slope, and leakage current was carried out in order to show the influence of the different environments on different aspects of the devices.

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Light Extraction Enhancement of InGaN Based Micro Light-Emitting Diodes with Concave-Convex Circular Composite Structure Sidewall

Cited by 5 publications

References 43 publications

Recent advances in micro-pixel light emitting diode technology

Recent advances in micro-pixel light emitting diode technology

Composite of ordered mesoporous materials and quantum dots for light extraction of μLEDs

Investigation of Electrical Properties and Reliability of GaN-Based Micro-LEDs

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