Light-Emitting Two-Dimensional Ultrathin Silicon Carbide

Lin, Shisheng

doi:10.1021/jp210536m

Cited by 278 publications

(143 citation statements)

References 31 publications

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“…Theoretical investigations have shown that GaN and SiC monolayer sheets can form 2D stable nanostructures. 18 Recently, ultrathin graphitic SiC nanoflakes with thickness down to 0.5-1.5 nm have been fabricated by Lin 19 via the method of mechanical exfoliation in solution. In addition, Liu et al 20 have shown that planar graphene/h-BN heterostructures can be formed by growing graphene in lithographically patterned h-BN atomic layers.…”

Section: Introductionmentioning

confidence: 99%

Two-dimensional lateral GaN/SiC heterostructures: First-principles studies of electronic and magnetic properties

Chen

Wang

et al. 2017

Phys. Rev. B

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We study the electronic and magnetic structures of quasi-one-dimensional interfaces along the zigzag direction in two dimensional GaN/SiC heterostructures using first-principles calculations. Four representative heterostructures with six inequivalent interfaces are discussed in detail. Our results indicate that a bulk electric field will develop only when both interfaces feature no gap states and the total net charge at interfaces are of opposite sign. All the geometries studied exhibit an intriguing quasi-one-dimensional conductor character, of which three show finite nonzero magnetic moment. Furthermore, the magnetic moment in one of the systems can be tuned by applying an electric field along the normal direction of monolayer indicating a strong magneto electric-coupling. Our analysis shows that the magnetization at the interfaces is closely related to the density of states at the Fermi level due to the Stoner instability, and the ribbon-width-dependent magnetization for different geometries implies the existence of an in-bulk electric field.

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Section: Introductionmentioning

confidence: 99%

Two-dimensional lateral GaN/SiC heterostructures: First-principles studies of electronic and magnetic properties

Chen

Wang

et al. 2017

Phys. Rev. B

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“…10 Furthermore, honeycomb lattices composed of alternating Boron (Silicon) and Nitrogen (Carbon) atoms have been synthesized. 11,12 In these binary compounds, the asymmetry between the different atoms induces a large gap in the spectrum, such that SiC is a semiconductor and hBN is an insulator.…”

Section: Introductionmentioning

confidence: 99%

“…III, we show that the Dirac cones along HS lines are a mere consequence of the mirrorreflection symmetry of the different materials. This allows us to promptly engineer Hamiltonians that display Dirac behaviour, and in particular, to realize a multitude of Dirac cones, which bring us from the SU(4) case in graphene to a generic SU(2N), for N-valley degrees of freedom (N=1, 2,4,6,8,12). Then, in Sec.…”

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confidence: 99%

Dirac cones beyond the honeycomb lattice: A symmetry-based approach

Miert

Smith

2016

Phys. Rev. B

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Recently, several new materials exhibiting massless Dirac fermions have been proposed. However, many of these do not have the typical graphene honeycomb lattice, which is often associated with Dirac cones. Here, we present a classification of these different two-dimensional Dirac systems based on the space groups, and discuss our findings within the context of a minimal two-band model. In particular, we show that the emergence of massless Dirac fermions can be attributed to the mirror symmetries of the materials. Moreover, we uncover several novel Dirac systems that have up to twelve inequivalent Dirac cones, and show that these can be realized in (twisted) bilayers. Hereby, we obtain systems with an emergent SU(2N) valley symmetry with N=1,2,4,6,8,12. Our results pave the way to engineer different Dirac systems, besides providing a simple and unified description of materials ranging from square-and β-graphynes, to Pmmn-Boron, TiB2, phosphorene, and anisotropic graphene.

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“…These new discoveries open a door to further explore unknown 2D materials, in particular, the unkonwn 2D binary compounds such as SiC, GeC, and III-V binary compounds [15,[19][20][21][22].…”

Section: Introductionmentioning

confidence: 99%

Theoretical prediction of sandwiched two-dimensional phosphide binary compound sheets with tunable bandgaps and anisotropic physical properties

Zhang¹,

Yu²

2018

Nanotechnology

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Atomic layers of GaP and InP binary compounds with unique anisotropic structural, electronic, and mechanical properties have been predicted from the first principle molecular dynamics simulations. These new members of phosphide binary compounds family stabilize to a sandwiched two-dimensional (2D) crystalline structure with orthorhombic lattices symmetry and high buckling of 2.14 Å-2.46 Å. Their vibration modes are similar to those of phosphorene with six Raman active modes ranging from ~80 cm -1 to 400 cm -1 . The speeds of sound in their phono dispersions reflect anisotropy in their elastic constants, which was further confirmed from their strong directional dependence of Young's moduli and effective nonlinear elastic moduli. They show wide bandgap semiconductor behavior with fundamental bandgaps of 2.89 eV for GaP and 2.59 eV for InP, respectively, even wider than their bulk counterparts. Such bandgaps were found to be tunable under the strains. In particular, a direct-indirect bandgap transition was found under certain strains along zigzag or biaxial orientations, reflecting their promising applications for the strain-induced bandgap engineering in nanoelectronics and photovoltaics. Feasible pathways to realize these novel 2D phosphide compounds were also proposed in this work.

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Light-Emitting Two-Dimensional Ultrathin Silicon Carbide

Cited by 278 publications

References 31 publications

Two-dimensional lateral GaN/SiC heterostructures: First-principles studies of electronic and magnetic properties

Two-dimensional lateral GaN/SiC heterostructures: First-principles studies of electronic and magnetic properties

Dirac cones beyond the honeycomb lattice: A symmetry-based approach

Theoretical prediction of sandwiched two-dimensional phosphide binary compound sheets with tunable bandgaps and anisotropic physical properties

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