Light Emitting Si‐Based Mie Resonators: Toward a Huygens Source of Quantum Emitters

Abstract

Silicon‐based micro‐ and nano‐structures for light management at near‐infrared and visible frequencies have been widely exploited for guided optics and metasurfaces. However, light emission with this material has been hampered by the indirect character of its bandgap. Here it is shown that, via ion beam implantation, light emitting G‐centers can be directly embedded within Si‐based Mie resonators previously obtained by solid state dewetting. Size‐ and position‐dependent, directional light emission at 120 K is demonstrated experimentally and confirmed by finite difference time domain simulations. It is estimated that, with an optimal coupling of the G‐centers emission with the resonant antennas, a collection efficiency of about 90% can be reached using a conventional objective lens. The integration of these telecom‐frequency emitters in resonant antennas is relevant for their efficient exploitation in quantum optics applications and more generally to Si‐based photonic metasurfaces.

Strain Engineering of the Electronic States of Silicon‐Based Quantum Emitters

“…[ 49,50 ] It is also worth pointing out that, beyond the present proof of principle that was limited to relatively large patches ( L up to about 8 µm), the reduction of L to about 1 µm with conventional etching methods, or even below this value (e.g. exploiting solid state dewetting [ 22,56 ] ), is possible. This could lead, potentially, to a stress that is more than one order of magnitude larger than what we show here, achieving strain regimes and polarization degrees not attained so far.…”

Sensitive and Broadband Wavelength Sensor Based on Two Graphene/Si/Graphene Heterojunctions

“…Therefore, both the spectral sensitivity and response range of the silicon‐based wavelength sensor can be improved by incorporating MLG with silicon, which opens up new opportunities for wavelength sensor to be configured in broadband detection of UV, visible, and NIR light. [ 25–28 ]…”

Magnetic Quadrupole-Exciton, Electric Dipole-Exciton, and Anapole-Exciton Interaction-Mediated Resonance Energy Transfer in Mie-Exciton Heterostructure

“…21 In this context, Si is one of the widely studied Mie-resonators due to its high refractive index, low absorption at near-infrared frequencies, scattering light directionality, and the possibility to concentrate the electric field without Joule losses. 22,23 Recently, different types of resonance coupling-mediated energy transfer were reported to study the light−matter interaction between optical nanoresonators and 2D TMDCs such as plasmon-exciton coupling, 24 plasmon-exciton-trion coupling, 25 magnetic dipole-exciton coupling, 26 and so on. 27−32 The main disadvantage observed for the plasmonexciton coupling system is that all-plasmonic nanostructures generate a large amount of heat, which can damage the surface of the 2D material.…”

“…Recently, the optical properties of high index nanostructures which can easily produce different resonant multipole modes became interesting due to the application point of view, even though all these phenomena are quite well-known through Mie scattering theory . In this context, Si is one of the widely studied Mie-resonators due to its high refractive index, low absorption at near-infrared frequencies, scattering light directionality, and the possibility to concentrate the electric field without Joule losses. , …”