Light-emitting field-effect transistors with EQE over 20% enabled by a dielectric-quantum dots-dielectric sandwich structure

Kong, Lingmei; Wu, Jialong; Li, Yunguo; Cao, Fan; Wang, Feijiu; Wu, Qianqian; Shen, Piaoyang; Zhang, Chengxi; Luo, Yun; Wang, Lin; Turyanska, Lyudmila; Ding, Xiaobin; Zhang, Jianhua; Zhao, Yong-Biao; Yang, Xuyong

doi:10.1016/j.scib.2021.12.013

Cited by 23 publications

(23 citation statements)

References 61 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…All EQE values (except the one with 10% Ir content) are nearly independent from the gate bias, while for TCTA:Ir(ppy) 3 10% emissive layer, the efficiency is seemingly linearly increasing with the gate voltage (field). While device ambipolarity ensured the injection of approximately the same number of charges, such a transport regime does not necessarily ensure an efficient exciton radiative decay, for which other features such as improved interfaces, enhanced charge injection, or transfer in the emissive layer 34 can play an important role in the exciton formation and dynamics. Figure 4 b shows a representative optical image of an organic light-emitting transistor fabricated on a glass/ITO substrate using 10% blend as an emissive layer, while in its ON-state shows the Ir(ppy) 3 characteristic green emission along the entire channel.…”

Section: Resultsmentioning

confidence: 99%

TCTA:Ir(ppy)₃ Green Emissive Blends in Organic Light-Emitting Transistors (OLETs)

2022

View full text Add to dashboard Cite

Organic light-emitting transistors are photonic devices combining the function of an electrical switch with the capability of generating light under appropriate bias conditions. Achieving high-performance light-emitting transistors requires high-mobility organic semiconductors, optimized device structures, and highly efficient emissive layers. In this work, we studied the optoelectronic response of green blends (TCTA:Ir(ppy) 3 ) with varying doping concentrations in the limit of field-effect within a transistor device configuration. Increasing the dye concentration within the blend leads to a quenching of the photoluminescence signal; however, when implemented in a multilayer stack in a transistor, we observed an approximately 5-fold improvement in the light output for a 10% Ir(ppy) 3 doping blend. We analyzed our results in terms of balanced charge transport in the emissive layer, which, in the limit of field-effect (horizontal component), leads to an improved exciton formation and decay process. While the performances of our devices are yet to achieve the state-of-the-art diode counterpart, this work demonstrates that engineering the emissive layer is a promising approach to enhance the light emission in field-effect devices. This opens the way for a broader exploitation of organic light-emitting transistors as alternative photonic devices in several fields, ranging from display technology to flexible and wearable electronics.

show abstract

Section: Resultsmentioning

confidence: 99%

TCTA:Ir(ppy)₃ Green Emissive Blends in Organic Light-Emitting Transistors (OLETs)

2022

View full text Add to dashboard Cite

show abstract

“…In QLEDs, charge concentrations and their build-up in the layers bulk and at interlayer interfaces directly influence excitonic phenomena and the efficiency of the radiative processes [11][12][13][14]. Therefore, optimizing charge injection and transport in the QD light emission layer (EML) and the charge transport layers is crucial for device efficiency and stability.…”

Section: Introductionmentioning

confidence: 99%

Significant Lifetime Enhancement in QLEDs by Reducing Interfacial Charge Accumulation via Fluorine Incorporation in the ZnO Electron Transport Layer

et al. 2022

View full text Add to dashboard Cite

ZnO nanoparticles are widely used for the electron transport layers (ETLs) of quantum dots light emitting devices (QLEDs). In this work we show that incorporating fluorine (F) into the ZnO ETL results in significant enhancement in device electroluminescence stability, leading to LT50 at 100 cd m−2 of 2,370,000 h in red QLED, 47X longer than the control devices. X-ray photo-electron spectroscopy, time-of-flight secondary ion mass spectroscopy, photoluminescence and electrical measurements show that the F passivates oxygen vacancies and reduces electron traps in ZnO. Transient photoluminescence versus bias measurements and capacitance–voltage-luminance measurements reveal that the CF4 plasma-treated ETLs lead to increased electron concentration in the QD and the QD/hole transport layer interface, subsequently decreasing hole accumulation, and hence the higher stability. The findings provide new insights into the critical roles that optimizing charge distribution across the layers play in influencing stability and present a novel and simple approach for extending QLED lifetimes.

show abstract

“…S4, ESI†). 35 In addition, the MABr interlayer is also helpful to mitigate the PL quenching of QDs (Fig. S5, ESI†) through passivating the oxygen vacancies in MZO, leading to the suppressed electron transfer from the MZO nanoparticles to the QDs.…”

Section: Resultsmentioning

confidence: 99%

Boosting the efficiency and stability of green InP quantum dot light emitting diodes by interface dipole modulation

Wang

et al. 2022

J. Mater. Chem. C

Self Cite

View full text Add to dashboard Cite

show abstract

Light-emitting field-effect transistors with EQE over 20% enabled by a dielectric-quantum dots-dielectric sandwich structure

Cited by 23 publications

References 61 publications

TCTA:Ir(ppy)₃ Green Emissive Blends in Organic Light-Emitting Transistors (OLETs)

TCTA:Ir(ppy)₃ Green Emissive Blends in Organic Light-Emitting Transistors (OLETs)

Significant Lifetime Enhancement in QLEDs by Reducing Interfacial Charge Accumulation via Fluorine Incorporation in the ZnO Electron Transport Layer

Boosting the efficiency and stability of green InP quantum dot light emitting diodes by interface dipole modulation

Contact Info

Product

Resources

About

Light-emitting field-effect transistors with EQE over 20% enabled by a dielectric-quantum dots-dielectric sandwich structure

Cited by 23 publications

References 61 publications

TCTA:Ir(ppy)3 Green Emissive Blends in Organic Light-Emitting Transistors (OLETs)

TCTA:Ir(ppy)3 Green Emissive Blends in Organic Light-Emitting Transistors (OLETs)

Significant Lifetime Enhancement in QLEDs by Reducing Interfacial Charge Accumulation via Fluorine Incorporation in the ZnO Electron Transport Layer

Boosting the efficiency and stability of green InP quantum dot light emitting diodes by interface dipole modulation

Contact Info

Product

Resources

About

TCTA:Ir(ppy)₃ Green Emissive Blends in Organic Light-Emitting Transistors (OLETs)

TCTA:Ir(ppy)₃ Green Emissive Blends in Organic Light-Emitting Transistors (OLETs)