2015
DOI: 10.1016/j.orgel.2015.03.029
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Light emitting field-effect transistors with vertical heterojunctions based on pentacene and tris-(8-hydroxyquinolinato) aluminum

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Cited by 17 publications
(16 citation statements)
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“…The typical LET architecture used has interdigitated source and drain electrodes as shown in Figure a to increase the W / L (ratio of the channel width to channel length) of the devices and enhance their performance. However, the major drawback of all these LETs continues to be the narrow emission zone, which is generally restricted to the edge of the emitting electrode (in unipolar mode) or a narrow emission zone moving through the channel (in ambipolar mode) …”
Section: A Table Of the Collated Values Of Electrical And Optical Chamentioning
confidence: 99%
“…The typical LET architecture used has interdigitated source and drain electrodes as shown in Figure a to increase the W / L (ratio of the channel width to channel length) of the devices and enhance their performance. However, the major drawback of all these LETs continues to be the narrow emission zone, which is generally restricted to the edge of the emitting electrode (in unipolar mode) or a narrow emission zone moving through the channel (in ambipolar mode) …”
Section: A Table Of the Collated Values Of Electrical And Optical Chamentioning
confidence: 99%
“…A cross‐sectional SEM image of the device (Figure S3, Supporting Information) shows clear separation of layers. The energy‐band diagram (Figure b) of the CNUVS in the cross‐sectional direction was obtained using ultraviolet photoelectron spectroscopy and UV‐vis absorption spectroscopy (Figure S4, Supporting Information) . Calculations yielded a valence band edge energy level of 5.77 eV, and a conduction band edge energy level of 2.36 eV.…”
mentioning
confidence: 99%
“…Among those materials, Tris (8-hydroxyquinoline) aluminum (III) (Alq3) has been attracted and seen as a promising candidate for its excellent electrical transport and emission properties, as well as its high thermal stability. As a result, it is a better choice for emissive and electron-transparent layers in OLED and organic light-emitting transistor (OLET) devices [ 6 , 7 , 8 ].…”
Section: Introductionmentioning
confidence: 99%