Light-emitting devices in industrial CMOS technology

Krämer, J.; Seitz, Peter; Steigmeier, E. F.; Auderset, H.; Delley, B.; Baltes, H.

doi:10.1016/0924-4247(93)80091-t

Cited by 94 publications

(29 citation statements)

References 12 publications

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“…19 These devices showed three orders of increase in optical output as compared with previous similar work. However, increases in efficiency seemed to be 28 and Snyman et al, 20 shows that longer wavelength emissions up to 750 nm can be achieved by focusing on the electron relaxation techniques in the purer n-side of the Si p − n avalanching junctions. This development has a very important implication.…”

Section: Si Cmos Avalanche Ledsmentioning

confidence: 99%

Optical propagation and refraction in silicon complementary metal–oxide–semiconductor structures at 750 nm: toward on-chip optical links and microphotonic systems

Ogudo

Schmieder

Foty³

et al. 2013

J. Micro/Nanolith. MEMS MOEMS

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Abstract. This paper analyzes the optical propagation and refraction phenomena in various complementary metal-oxide-semiconductor (CMOS) structures at 750 nm wavelength. Operation at these wavelengths offers the potential realizations of small microphotonic systems and micro-optoelectro-mechanical systems (MOEMS) in CMOS integrated circuitry, since Si-based optical sources, waveguides, and silicon (Si) detectors can all be integrated on a single chip. It could also increase the optical coupling efficiencies to external optical fibers. With the help of Monte Carlo and RSoft BeamPROP simulations, we demonstrate achievements with regard to optimizing vertical emission, focusing, refraction, splitting and wave guiding in 0.35 to 1.2 μm CMOS technology at 750 nm wavelength. The material properties, refractive indices, and thicknesses of various CMOS over-layers were incorporated in the simulations and analyses. The analyses show that both Si nitride and Si oxi-nitride offer good viability for developing such waveguides. Effective single-mode wave-guiding with calculated loss characteristics of 0.65 dB · cm −1 , with modal dispersion characteristics of less than 0.2 ps · cm −1 and with a bandwidth-length product of higher than 100 GHz-cm seems possible. A first iteration realization of an optical link is demonstrated, utilizing specially designed avalanche-based Si-LEDs and a specially designed first iteration CMOS waveguide. Potential applications of avalanche-based Si LEDs into microphotonic systems and MOEMS are furthermore proposed and highlighted.

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Section: Si Cmos Avalanche Ledsmentioning

confidence: 99%

Optical propagation and refraction in silicon complementary metal–oxide–semiconductor structures at 750 nm: toward on-chip optical links and microphotonic systems

Ogudo

Schmieder

Foty³

et al. 2013

J. Micro/Nanolith. MEMS MOEMS

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“…It is well know that a silicon based pn junction emits light both in forward and in reverse bias conditions. A pn junction shows an output power efficiency of about 10 −4 at 1.1 µm in forward bias, and of about 10 −8 in the visible and in reverse bias while in the avalanche breakdown regime [99]. The spectral features are various, the origin of the luminescence is not yet clear and several models have been presented [100].…”

Section: Light Emitting Diodesmentioning

confidence: 99%

Porous Silicon

Ossicini¹,

Pavesi²,

Priolo³

2003

Springer Tracts in Modern Physics

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In 1990 it was proposed that Si when rendered porous can be an efficient light emitting system, as efficient as many III-V semiconductor systems [1]. The reason for this was attributed to the low dimensionality of the surviving Si skeleton. In addition other effects were recognized: (1) the large photon extraction efficiency due to the decrease in the effective refractive index and (2) the confinement of the carriers in regions free of recombination centers. After this very surprising report, a huge number of papers was published trying to understand the optical properties of porous silicon (PS) and the physical mechanism at the heart of the large luminescence efficiency. Soon it was realized that PS is a very fragile and highly reactive material so that many of its properties are age dependent and unstable. Over the years, sizeable progress was made both in terms of improvement of its stability and in term of efficiency of the device. Microelectronics compatibility of PS was demonstrated and integration of driving circuits with a light emitting element was performed [2]. At the same time microcavities with improved light emission properties were demonstrated [3]. At the end of 2000 another paper shocked the silicon community: the report on light amplification or optical gain in silicon nanocrystals [4]. This paper raises big hopes of the development of a silicon laser even though it is not yet clear whether PS can be used as an active material.In this chapter we will try to review the most important results about the exploitation and the understanding of the properties of PS. The chapter is divided into six parts. The first introduces how porous silicon is made. The second is aimed to demonstrate that the structure of PS is a collection of nanometric objects that contribute to the light emission process. The relevant role of the surface chemistry is underlined. The third and fourth parts discuss the essential features of the absorption and luminescence of PS in order to discriminate between the models of the recombination mechanisms. The fifth presents recent progress in the field of electrical properties of PS. The section six is an overview of the application of PS in light emitting diodes.In the last few years various conference proceedings [5], review articles [6] and edited books [7] have been published on PS.

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“…Because of this advantage, a number of Si diode (it should be kept in mind that the diode is a two-terminal device) light sources have been studied. 6,7 Visible light emission from reversely-biased Si pn junctions was reported for the first time by Newman et al 8,9 From this, it was concluded that recombination between free electrons and free holes within the junction region is responsible for the light at the higher energy of emitted photon, whereas the emitted photons at the lower energy appeared to be contributed by the emission from intraband transition.…”

Section: Introductionmentioning

confidence: 97%

A novel way to improve the quantum efficiency of silicon light-emitting diode in a standard silicon complementary metal–oxide–semiconductor technology

Xu¹,

Li²

2013

Journal of Applied Physics

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Silicon diode at avalanche breakdown has visible light emission in the depletion region. It is believed that this optical radiation comes from the kinetic energy loss of carriers generated by impact ionization colliding with immobile charge centers in the avalanche region. A theoretical model is presented to show the correlation of the hot carrier effect with the related photonic emission in high field. Meanwhile, a PMOSFET-like silicon light source device fabricated completely in the standard silicon CMOS process technology is measured to demonstrate that avalanching current is linearly proportional to optical emission power whether this light source acts as a two-terminal device (i.e., diode, the “p+ Source/Drain to n-Substrate junction” with floating the gate) or acts as a three-terminal device (i.e., gate-diode, the “p+ Source/Drain to n-Substrate junction” in the course of varying the gate voltage). Such linearity implies that control of the increasing current is a significant way to enhance the quantum efficiency of this light source device no matter what the physical structure (i.e., two terminals or three terminals) of this device is. For the first time, it has been discovered that, at the same avalanching current, the optical output power in gate-diode structure is higher than the optical output power in diode structure. In other words, for this PMOSFET-like device, the three-terminal operating mode is more efficient than the two-terminal operating mode.

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Light-emitting devices in industrial CMOS technology

Cited by 94 publications

References 12 publications

Optical propagation and refraction in silicon complementary metal–oxide–semiconductor structures at 750 nm: toward on-chip optical links and microphotonic systems

Optical propagation and refraction in silicon complementary metal–oxide–semiconductor structures at 750 nm: toward on-chip optical links and microphotonic systems

Porous Silicon

A novel way to improve the quantum efficiency of silicon light-emitting diode in a standard silicon complementary metal–oxide–semiconductor technology

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