Light emitting devices based on nanocrystalline-silicon multilayer structure

Wang, M.; Anopchenko, Aleksei; Marconi, A.; Moser, E.; Prezioso, S.; Pavesi, L.; Pucker, G.; Bellutti, P.; Vanzetti, L.

doi:10.1016/j.physe.2008.08.009

Cited by 49 publications

(47 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…In addition, under AC biasing some interesting features (Fig. 22b) appear that suggest that injection in ML samples is through direct tunneling, while in SL it is through FowlerNordheim tunneling [162]. ML samples show strong EL for low gate voltage and almost independent of it.…”

Section: Methodsmentioning

confidence: 97%

See 1 more Smart Citation

Nanosilicon photonics

Daldosso¹,

Pavesi

2009

Laser & Photonics Reviews

Self Cite

161

105

View full text Add to dashboard Cite

Silicon photonics is no longer an emerging field of research and technology but a present reality with commercial products available on the market, where low-dimensional silicon (nanosilicon or nano-Si) can play a fundamental role. After a brief history of the field, the optical properties of silicon reduced to nanometric dimensions are introduced. The use of nano-Si, in the form of Si nanocrystals, in the main building blocks of silicon photonics (waveguides, modulators, sources and detectors) is reviewed and discussed. Recent advances of nano-Si devices such as waveguides, optical resonators (linear, rings, and disks) are treated. Emphasis is placed on the visible optical gain properties of nano-Si and to the sensitization effect on Er ions to achieve infrared light amplification. The possibility of electrical injection in light-emitting diodes is presented as well as the recent attempts to exploit nano-Si for solar cells. In addition, nonlinear optical effects that will enable fast all-optical switches are described.

show abstract

Section: Methodsmentioning

confidence: 97%

“…Fig. 21 show a typical Si-nc LED that we have studied to optimize bipolar injection [162,163]. It consists in a 20-30-nm thick oxide enriched by nano-Si, with two different structures: one has a single SRO composition; the others have a multilayer (ML) structure composed by alternating nm-thick SiO 2 and SRO layers.…”

Section: Methodsmentioning

confidence: 99%

Nanosilicon photonics

Daldosso¹,

Pavesi

2009

Laser & Photonics Reviews

Self Cite

161

105

View full text Add to dashboard Cite

show abstract

“…Using multilayer structures in electroluminescence experiments has a relatively long history [122][123][124][125][126]. Nowadays, interest in multilayers has been revived [127][128][129], supported by several enhanced properties of the multilayer LED with respect to a single-layer nanocrystalline silicon LED: low turn-on voltages, low leakage currents, high nanocrystal density, and more uniform nanocrystal size. The main advantage of the multilayer structure is the possibility of exercising a better control over the nanocrystal formation through the confined silicon growth and, hence, the possibility of accurately designing the nanocrystalline silicon layer of the LED.…”

Section: Si-nc-based Ledmentioning

confidence: 99%

“…Multilayer devices show much higher current density in the low electric field region. The multilayer SRO 3 nm/SiO 2 2 nm has the same average silicon content as the single layer and lower silicon content than the SRO 4 nm/SiO 2 2 nm[127].…”

mentioning

confidence: 97%

See 1 more Smart Citation

Photonics Application of Silicon Nanocrystals

Anopchenko

Daldosso

Guider

et al. 2010

Silicon Nanocrystals

View full text Add to dashboard Cite

Routes to Achieving High Quantum Yield Luminescence from Gas‐Phase‐Produced Silicon Nanocrystals

Anthony

Rowe

Stein

et al. 2011

Adv Funct Materials

110

View full text Add to dashboard Cite

Plasma‐synthesized silicon nanocrystals with alkene ligands have shown the potential to exhibit high‐efficiency photoluminescence, but results reported in the literature have been inconsistent. Here, for the first time, the role of the immediate post‐synthesis “afterglow plasma” environment is explored. The significant impact of gas injection into the afterglow plasma on the photoluminescence efficiency of silicon nanocrystals is reprorted. Depending on the afterglow conditions, photoluminescence quantum yields of silicon nanocrystals synthesized under otherwise identical conditions can vary by a factor of almost five. It is demonstrated that achieving a fast quenching of the particle temperature and a high flux of atomic hydrogen to the nanocrystal surface are essential for a high photoluminescence quantum yield of the produced silicon nanocrystals.

show abstract

Light emitting devices based on nanocrystalline-silicon multilayer structure

Cited by 49 publications

References 19 publications

Nanosilicon photonics

Nanosilicon photonics

Photonics Application of Silicon Nanocrystals

Routes to Achieving High Quantum Yield Luminescence from Gas‐Phase‐Produced Silicon Nanocrystals

Contact Info

Product

Resources

About