Light emission spectra of individual GaAs quantum wells induced by scanning tunneling microscope

Tsuruoka, Tohru; Ohizumi, Y.; Tanimoto, R.; Ushioda, S.

doi:10.1063/1.124993

Cited by 21 publications

(4 citation statements)

References 19 publications

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“…STL studies have been intensively performed on the luminescence in III/V semiconductor heterostructures, wherein quantum wells,3–5 quantum wires6, 7 or quantum dots8–10 are embedded in a larger‐bandgap material to achieve carrier confinement. In contrast, there are only a few reports on STM‐induced light emission from freestanding semiconductor nanostructures deposited on a metal substrate 11–13.…”

Section: Introductionmentioning

confidence: 99%

Scanning Tunneling Luminescence of Individual CdSe Nanowires

Lutz

Kabakchiev

Dufaux

et al. 2011

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The local luminescence properties of individual CdSe nanowires composed of segments of zinc blende and wurtzite crystal structures are investigated by low-temperature scanning tunneling luminescence spectroscopy. Light emission from the wires is achieved by the direct injection of holes and electrons, without the need for coupling to tip-induced plasmons in the underlying metal substrate. The photon energy is found to increase with decreasing wire diameter due to exciton confinement. The bulk bandgap extrapolated from the energy versus diameter dependence is consistent with photon emission from the zinc blende-type CdSe sections.

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Section: Introductionmentioning

confidence: 99%

Scanning Tunneling Luminescence of Individual CdSe Nanowires

Lutz

Kabakchiev

Dufaux

et al. 2011

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“…In the case of semiconductor systems, the recombination of minority carriers injected by a STM tip and the observation of luminescence from semiconductor quantum wells [10][11][12], quantum wires [13], quantum dots [14] and surfaces 2 ) have been reported.…”

Section: Introductionmentioning

confidence: 99%

Optical and Electrical Injection of Single Quantum Dots: Beyond the Inhomogeneous Broadening Issues

Cingolani

Rinaldi

2002

phys. stat. sol. (b)

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Dedicated to Professor Dr. Roland Zimmermann on the occasion of his 60th birthday Inhomogeneous broadening is a long standing issue in the physics of nanostructures, in that it prevents the detailed assessment of their electronic and optical properties, and limits the performances of nanostructure based devices. Advances in scanning probe spectroscopies have recently permitted to overcome this problem, thus opening the way to a detailed understanding of the single nanostructure properties, by virtue of their unsurpassed capability to inject carriers or photons at local scale. In particular, luminescence spectroscopy and current-voltage spectroscopy following highly localized carrier injection by a scanning tunneling microscope into a single quantum dot (QD), are the methods of choice to overcome the inhomogeneous broadening effects due to size and compositional non-uniformity. In this way one can map the eigenstates of a single dot, elucidate the relationships between carrier injection, capture and recombination, investigate the dynamics of single-dot filling, the formation of excitons and charged excitons, the occurrence of dot-dot interactions leading to molecular states, and the diffusion of charges into neighboring dots in a grand ensemble. IntroductionThe optical properties of single, isolated InGaAs self-organized QDs, have been intensively investigated in recent years. The characteristic sharp narrow lines of single-dot spectra have been identified and associated with the population of the atomic-like energy level scheme of a single, isolated QD [1-3]. However, the complexities of the ensemble QD system, such as variations in dot size, shape, composition and nearest-neighbor distance [4] together with the complex energy relaxation processes [5], inter-dot carrier and excitation transfer [6], make the prediction of the optical properties quite difficult. Hence, a study of the QD luminescence following highly localized carrier injection into the QD ensemble by a scanning tunneling microscope, allows the relationship between carrier density, energy and subsequent QD capture to be examined, beyond the inhomogeneous broadening issues.Scanning tunneling induced light emission has been reported by several groups ([7, 8] and references therein). In the case of semiconductor systems, the recombination of minority carriers injected by a STM tip and the observation of luminescence from semiconductor quantum wells [10-12], quantum wires [13], quantum dots [14] and surfaces 2 ) have been reported.

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“…1. We have applied this spectroscopic technique with an atomic scale spatial resolution to several sample systems, including QW's [1,2], QD's [3], and surface adsorbed atoms and molecules [4,5]. In this talk we will focus on the measurement of the electron thermalization and diffusion lengths in real space in AlGaAs/GaAs QW structures [6,7].…”

Section: Introductionmentioning

confidence: 99%

STM light emission spectroscopy of individual quantum wells: measurement of transport parameters in real space

et al. 2004

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By spectroscopically analyzing the light emitted from the tip-sample gap of the scanning tunneling microscope (STM), we have investigated the carrier transport as well as the luminescence properties of AlGaAs/GaAs quantum wells (QW's). The emission intensity form a target well was measured as a function of the tip position on a cleaved (110) surface of the QW structures. The thermalization length and the diffusion length of the injected electrons were determined in real space.

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Light emission spectra of individual GaAs quantum wells induced by scanning tunneling microscope

Cited by 21 publications

References 19 publications

Scanning Tunneling Luminescence of Individual CdSe Nanowires

Scanning Tunneling Luminescence of Individual CdSe Nanowires

Optical and Electrical Injection of Single Quantum Dots: Beyond the Inhomogeneous Broadening Issues

STM light emission spectroscopy of individual quantum wells: measurement of transport parameters in real space

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